LOW NOISE AMPLIFIER USING ELECTROMAGNETIC SIMULATOR AT U-NII FREQUENCY BAND

  • Kim, Hak-Sung (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
  • Kim, Cheol-Su (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
  • Kim, Cheol-Su (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
  • Lee, Byung-Jae (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
  • Lee, Jong-Chul (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
  • Kim, Nam-Young (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce)
  • Published : 2000.11.01

Abstract

In this paper, the design for a low noise amplifier with the EM simulation is presented. The ATF36077 pHEMT device is applied to design LNA for U-NII frequency band (5 GHz ~ 6 GHz). The matching networks have been designed by the only open ended stub in order to reduce parasitic effects generated from a via structure. Through EM simulator, the simulation result shows that the linear gain (@5.5 GHz) is over 10 dB, input return loss and output return loss (@ 5.5 GHz) are a below 10 dB respectively, and the 3rd order intercept point is about 17 dBm.

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