Proceedings of the Korea Electromagnetic Engineering Society Conference (한국전자파학회:학술대회논문집)
- 2000.11a
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- Pages.225-228
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- 2000
LOW NOISE AMPLIFIER USING ELECTROMAGNETIC SIMULATOR AT U-NII FREQUENCY BAND
- Kim, Hak-Sung (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
- Kim, Cheol-Su (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
- Kim, Cheol-Su (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
- Lee, Byung-Jae (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
- Lee, Jong-Chul (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce) ;
- Kim, Nam-Young (School of Electronic Eng. Kwangwoon Univ. RFIC Research & Education Center, Mission Technology Research Ce)
- Published : 2000.11.01
Abstract
In this paper, the design for a low noise amplifier with the EM simulation is presented. The ATF36077 pHEMT device is applied to design LNA for U-NII frequency band (5 GHz ～ 6 GHz). The matching networks have been designed by the only open ended stub in order to reduce parasitic effects generated from a via structure. Through EM simulator, the simulation result shows that the linear gain (@5.5 GHz) is over 10 dB, input return loss and output return loss (@ 5.5 GHz) are a below 10 dB respectively, and the 3rd order intercept point is about 17 dBm.
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