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http://dx.doi.org/10.5515/KJKIEES.2016.27.2.220

A High Linearity Low Noise Amplifier Using Modified Cascode Structure  

Park, Seung Pyo (Electrical and Computer Engineering, University of Seoul)
Eu, Kyoung Jun (Electrical and Computer Engineering, University of Seoul)
No, Seung Chang (Electrical and Computer Engineering, University of Seoul)
Lee, Moon-Que (Electrical and Computer Engineering, University of Seoul)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.27, no.2, 2016 , pp. 220-223 More about this Journal
Abstract
This letter proposes a low noise amplifier which has low noise figure and high linearity simultaneously using a cascode structure with an additional transistor. The proposed structure minimizes the noise source by using optimizing transistor sizes and also improves linearity from the current bleeding technique. The device was fabricated in a $0.5{\mu}m$ GaAs pHEMT process and has noise figure of 1.1 dB, a voltage gain of 15.0 dB, an $OIP_3$ of 30.8 dBm and an input/output return loss of 11.6 dB/10.4 dB from 1.8 to 2.6 GHz.
Keywords
Low Noise Amplifier(LNA); Linearity; PCSNIM; Internal Matching;
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