• Asian-Australasian Journal of Animal Sciences
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• v.20 no.1
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• pp.25-30
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• 2007

The capability of microsatellite markers for individual identification and their potential for breed assignment of individuals was evaluated in two Indian horse breeds. The strength of these individual assignment methods was also evaluated by increasing the number of loci in increments of five. The probability of identity of two random horses from the two breeds at all twenty five studied loci was as low as $1.08{\times}10^{-32}$ showing their suitability to distinguish between individual horses and their products. In the phylogenetic approach for individual assignment using Nei's genetic distances, 10.81% of horses associated with breed other than the major cluster of the source breed horses when all twenty five microsatellite loci were implemented. Similar results were obtained when the maximum likelihood approach for individual assignment was used. Based on these results it is proposed that, although microsatellite markers may prove very useful for individual identification, their utility for breed assignment of horses needs further evaluation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.228-239
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• 2004

In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.458-466
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• 2012

A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

• Imaging Science in Dentistry
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• v.45 no.2
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• pp.123-131
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• 2015

Throughout the years, various classifications have evolved for the diagnosis of vascular anomalies. However, it remains difficult to classify a number of such lesions. Because all hemangiomas were previously considered to involute, if a lesion with imaging and clinical characteristics of hemangioma does not involute, then there is no subclass in which to classify such a lesion, as reported in one of our cases. The recent classification proposed by the International Society for the Study of Vascular Anomalies (ISSVA, 2014) has solved this problem by including non-involuting and partially involuting hemangioma in the classification. We present here five cases of vascular anomalies and discuss their diagnosis in accordance with the ISSVA (2014) classification. A non-involuting lesion should not always be diagnosed as a vascular malformation. A non-involuting lesion can be either a hemangioma or a vascular malformation depending upon its clinicopathologic and imaging characteristics.

• Advances in Traditional Medicine
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• v.8 no.2
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• pp.135-145
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• 2008

The study was aimed at evaluating the antioxidant and free radical scavenging activities of ethanolic extract and its fractions of Cleome rutidosperma. The antioxidant activity, reducing power, total phenolic content, total flavonoid content, superoxide anion scavenging activity, nitric oxide anion scavenging activity, in vitro antilipid peroxidation activity and in vitro non-enzymatic hemoglobin glycosylation were studied. The results obtained in the study indicate that Cleome rutidosperma is a potential source of natural antioxidant. All the parameters were found to be concentration dependent and increased with increasing amounts of sample. Flavonoids, phenolic compound like tannins, terpenoids may be responsible for the antioxidant activity of the plant. Variation of solubility parameters in various models may be attributed to non-linearity of activity of ethanol extract fractions models. Further investigation on the isolation and identification of antioxidant component(s) in the plant may lead to chemical entities with potential for clinical use.

• Communications of the Korean Mathematical Society
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• v.35 no.3
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• pp.855-866
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• 2020

For two essentially bounded Lebesgue measurable functions 𝜙 and ξ on unit circle 𝕋, we attempt to study properties of operators $S^k_{\mathcal{M}({\phi},{\xi})=S^k_{T_{\phi}}+S^k_{H_{\xi}}$ on H²(𝕋) (k ≥ 2), where $S^k_{T_{\phi}}$ is a k^th-order slant Toeplitz operator with symbol 𝜙 and $S^k_{H_{\xi}}$ is a k^th-order slant Hankel operator with symbol ξ. The spectral properties of operators S^k_{𝓜(𝜙,𝜙)} (or simply S^k_𝓜(𝜙)) are investigated on H²(𝕋). More precisely, it is proved that for k = 2, the Coburn's type theorem holds for S^k_𝓜(𝜙). The conditions under which operators S^k_𝓜(𝜙) commute are also explored.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.224-236
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• 2013

This work presents a comparative study of four Double Gate tunnel FET (DG-TFET) architectures: conventional p-i-n DG-TFET, p-n-p-n DG-TFET, a gate dielectric engineered Heterogate (HG) p-i-n DG-TFET and a new device architecture with the merits of both Hetero Gate and p-n-p-n, i.e. HG p-n-p-n DG-TFET. It has been shown that, the problem of high gate capacitance along with low ON current for a p-i-n TFET, which severely hampers the circuit performance of TFET can be overcome by using a p-n-p-n TFET with a dielectric engineered Hetero-gate architecture (i.e. HG p-n-p-n). P-n-p-n architecture improves the ON current and the heterogeneous dielectric helps in reducing the gate capacitance and suppressing the ambipolar behavior. Moreover, the HG architecture does not degrade the output characteristics, unlike the gate drain underlap architecture, and effectively reduces the gate capacitance.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.17
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• pp.7393-7400
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• 2015

Matrix metalloproteinase (MMP) 9, a key member of multifunctional family of zinc dependent endopeptidases has been found to be upregulated during inflammation and in some cancers. MMPs cleave extracellular matrix (ECM) proteins and play critical roles in cellular apoptosis, angiogenesis, tumor growth and metastasis. Several genetic polymorphisms have been identified that show allele specific effects on MMP9 regulation and are associated with gastric cancer, the fourth most common malignancy in the world. Besides Helicobacter pylori infection, genetic predisposition is another documented risk factor for gastric carcinoma. The single nucleotide polymorphism (SNP) at position -1562C/T of MMP9 results in the modulation for binding of transcription factors to the MMP9 gene promoter and thereby causes differences in protein expression and enzymatic activity. MMP9 transcriptional regulation during gastric cancer development remains poorly known although several studies have demonstrated associations between MMP9 -1562 C/T polymorphism with different diseases. Knowledge on mechanisms of MMP9 upregulation during gastric cancer may provide new paradigm in diagnostics and therapeutics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.622-634
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• 2013

The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.