• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.401-406
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• 2005

Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.

• Proceedings of the KSR Conference
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• 2007.11a
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• pp.1438-1444
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• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.259-266
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• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.777-780
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• 1993

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.

• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• Journal of Power Electronics
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• v.7 no.2
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• pp.146-158
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• 2007

A multi-pulse GTO based voltage source converter (VSC) topology together with a fundamental frequency switching mode of gate control is a mature technology being widely used in static synchronous compensators (STATCOMs). The present practice in utility/industry is to employ a high number of pulses in the STATCOM, preferably a 48-pulse along with matching components of magnetics for dynamic reactive power compensation, voltage regulation, etc. in electrical networks. With an increase in the pulse order, need of power electronic devices and inter-facing magnetic apparatus increases multi-fold to achieve a desired operating performance. In this paper, a competitive topology with a fewer number of devices and reduced magnetics is evolved to develop an 18-pulse, 2-level $\pm$ 100MVAR STATCOM in which a GTO-VSC device is operated at fundamental frequency switching gate control. The inter-facing magnetics topology is conceptualized in two stages and with this harmonics distortion in the network is minimized to permissible IEEE-519 standard limits. This compensator is modeled, designed and simulated by a SimPowerSystems tool box in MATLAB platform and is tested for voltage regulation and power factor correction in power systems. The operating characteristics corresponding to steady state and dynamic operating conditions show an acceptable performance.

• Journal of Electrical Engineering and Technology
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• v.3 no.3
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• pp.391-400
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• 2008

Multi-pulse topology of converters using elementary six-pulse GTO - VSC (gate turn off based voltage source converter) operated under fundamental frequency switching (FFS) control is widely adopted in high power rating static synchronous compensators (STATCOM). Practically, a 48-pulse ($6{\times}8$ pulse) configuration is used with the phase angle control algorithm employing proportional and integral (PI) control methodology. These kinds of controllers, for example the ${\pm}80MVAR$ compensator at Inuyama switching station, KEPCO, Japan, employs two stages of magnetics viz. intermediate transformers (as many as VSCs) and a main coupling transformer to minimize harmonics distortion in the line and to achieve a desired operational efficiency. The magnetic circuit needs altogether nine transformers of which eight are phase shifting transformers (PST) used in the intermediate stage, each rating equal to or more than one eighth of the compensator rating, and the other one is the main coupling transformer having a power rating equal to that of the compensator. In this paper, a two-level 48-pulse ${\pm}100MVAR$ STATCOM is proposed where eight, six-pulse GTO-VSC are employed and magnetics is simplified to single-stage using four transformers of which three are PSTs and the other is a normal transformer. Thus, it reduces the magnetics to half of the value needed in the commercially available compensator. By adopting the simple PI-controllers, the model is simulated in a MATLAB environment by SimPowerSystems toolbox for voltage regulation in the transmission system. The simulation results show that the THD levels in line voltage and current are well below the limiting values specified in the IEEE Std 519-1992 for harmonic control in electrical power systems. The controller performance is observed reasonably well during capacitive and inductive modes of operation.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.718-722
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• 2001

This paper proposes an SSSC based on multi-bridge inverters in PWM scheme. The proposed system consists of 6 H-bridge inverter modules per phase. The dynamic characteristic of proposed system was analyzed by simulation with EMTP codes, assuming that the SSSC is inserted in the 154-kV transmission line of one-machine-infinite-bus power system. The feasibility of hardware implementation was verified through experimental works with a scaled-model. The proposed system can be directly inserted in the transmission line without coupling transformers, and has flexibility in expanding the operation voltage by increasing the number of H-bridges.