Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Analysis for the parallel operation of IGBT considering snubber circuit

스너버를 고려한 IGBT의 병렬운전 특성해석

  • Kim, Yoon-Ho (Department of Electrical Engineering, Chung-Ang University) ;
  • Yoon, Byung-Do (Department of Electrical Engineering, Chung-Ang University) ;
  • Lee, Jang-Sun (Department of Electrical Engineering, Chung-Ang University) ;
  • Lee, Sang-Sup (Department of Electrical Engineering, Chung-Ang University)
  • 김윤호 (중앙대학교 전기공학과) ;
  • 윤병도 (중앙대학교 전기공학과) ;
  • 이장선 (중앙대학교 전기공학과) ;
  • 이상섭 (중앙대학교 전기공학과)
  • Published : 1993.07.18
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Abstract

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.

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