Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of the Dual Gate Emitter Switched Thyristor

Dual Gate Emitter Switched Thyristor의 전기적 특성

  • 김남수 (충북대학교 전지전자공학부) ;
  • 이응래 (충북대학교 전지전자공학부) ;
  • 최지원 (충북대학교 전지전자공학부) ;
  • 김영석 (충북대학교 전지전자공학부) ;
  • 김경원 (하이닉스반도체) ;
  • 주변권 (고려대학교 전기공학과)
  • Published : 2005.05.01
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Abstract

Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.

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References

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