Browse > Article
http://dx.doi.org/10.4313/JKEM.2004.17.3.259

A Study on the Change of Electrical Characteristics in the EST(Emitter Switched Thyristor) with Trench Electrodes  

김대원 (고려대학교 전기공학과)
성만영 (고려대학교 전기공학과)
강이구 (극동대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.3, 2004 , pp. 259-266 More about this Journal
Abstract
In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.
Keywords
EST; Trench electrode; Current Saturation; Snap-back; Dual Trench Gate;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
1 A high performance plasma display driver IC using SOI /
[ H.S.Sumida;A.Hirabayashi;H.Shinmabukuro;Y.Takazawa;Y.Shigeta ] / Proc. Int. Symposium on Power Semiconductor Devices & ICs
2 A novel lateral trench electrode IGBT for super electrical characteristics /
[ Ey Goo Kang;Man Young Sung ] / Trans. on EEM
3 /
[ B.J.Baliga ] / Power semiconductor devices
4 Silicon MOS controlled bipolar power switching devices using trench technology /
[ T.Trajkovic;F.Udrea;G.A.J.Amaratunga;W.I.Milne;S.S.M.Chan;P.R.Waind;J.Thomson;D.E.Crees ] / Int. J. Electronics   DOI   ScienceOn
5 The future of power semi conductor device technology /
[ B.Jayant Baliga ] / Proc. of the IEEE   DOI   ScienceOn
6 /
[ V.Benda;J.Gowar;D.A.Grant ] / Power semiconductor devices
7 The insulated gate transistor : A new three-terminal MOS-cintrolled bipolar power devices /
[ B.J.Baliga;M.S.Adler;R.P.Love;P.V.Gray;N.D.Zommer ] / IEEE Trans. on Electron Devices
8 Design aspects of MOS controlled thyristor elements /
[ Bauer,F.;Roggwiler,P.;Aernmer,A.;Fichtner,W.;Vuilleumier,R;Moret,J. ] / IEDM Tech. Dig.
9 Simulation o a novel lateral trench electrode IGBT with improved latch-up and forward blocking characteristics /
[ E.G.Kang;S.H.Moon;M.Y.Sung ] / Trans. on EEM   과학기술학회마을
10 세그먼트 p-베이스를 이용한 수평형 이중 채녈 EST /
[ 오재근;변대석;한민구;최연익 ] / 대한전기학회   과학기술학회마을
11 Characteristics of the emitter switched thyristor /
[ M.S.Shekar;B.J.Baligar;M.Nandakumar;S.Tandon;A.Reismnn ] / IEEE Trans. on Electron Devices   DOI   ScienceOn
12 A novel EST with trench electrode to immunize snab-back effect and to obtain high blocking voltage /
[ E.C.Kang;M.Y.Sung ] / Trans. on EEM   과학기술학회마을
13 래치 업 특성의 개선과 고속스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT /
[ 강이구;성만영 ] / 전기전자재료학회논문지   과학기술학회마을