Study of relation between gate overlap length and device reliability in amorphous InGaZnO thin film transistors (비정질 InGaZnO 박막트랜지스터에서 Gate overlap 길이와 소자신뢰도 관계 연구)
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- Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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- 2014.10a
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- pp.769-772
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- 2014