• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.59-62
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• 2017

In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

• Restorative Dentistry and Endodontics
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• v.44 no.3
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• pp.32.1-32.13
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• 2019

Calcium hydroxide (CH) is the gold-standard intracanal dressing for teeth subjected to traumatic avulsion. A common complication after the replantation of avulsed teeth is root resorption (RR). The current review was conducted to compare the effect of CH with that of other intracanal medications and filling materials on inflammatory RR and replacement RR (ankylosis) in replanted teeth. The PubMed and Scopus databases were searched through June 2018 using specific keywords related to the title of the present article. The materials that were compared to CH were in 2 categories: 1) mineral trioxide aggregate (MTA) and endodontic sealers as permanent filling materials for single-visit treatment, and 2) Ledermix, bisphosphonates, acetazolamide, indomethacin, gallium nitrate, and enamel matrix-derived protein (Emdogain) as intracanal medicaments for multiple-visit management of avulsed teeth prior to the final obturation. MTA can be used as a single-visit root filling material; however, there are limited data on its efficacy due to a lack of clinical trials. Ledermix and acetazolamide were comparable to CH in reducing RR. Emdogain seems to be an interesting material, but the data supporting its use as an intracanal medication remain very limited. The conclusions drawn in this study were limited by the insufficiency of clinical trials.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.4
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• pp.259-267
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• 2019

An active clamp flyback (ACF) converter applies a clamp circuit and circulates the energy of leakage inductance to the input side, thereby achieving a zero-voltage switching (ZVS) operation and greatly reducing switching losses. The switching losses are further reduced by applying a gallium nitride field effect transistor (GaN-FET) with excellent switching characteristics, and ZVS operation can be accomplished under light load with boundary conduction mode (BCM) operation. Optimal design is performed on the basis of loss analysis by selecting magnetization inductance based on BCM operation and a clamp capacitor for loss reduction. Therefore, the size of the reactive element can be reduced through high-frequency operation, and a high-efficiency and high-power-density converter can be achieved. This study proposes an optimal design for a high-efficiency and high-power-density BCM ACF converter based on GaN-FETs and verifies it through experimental results of a 65 W-rated prototype.

• Journal of IKEEE
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• v.23 no.1
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• pp.326-329
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• 2019

Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.9-15
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• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.98-102
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• 2021

GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga₂O₃ at 500℃ annealing. As the annealing temperatures increase the α-Ga₂O₃ is in part turned into β-Ga₂O₃ and fully turned into β-Ga₂O₃ after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga₂O₃ and β-Ga₂O₃ become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.13-20
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• 2021

GaN has shown good potential owing to its better chemical stability than other materials and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of the solar spectrum, thus improves the solar-to-hydrogen (STH) efficiency. In addition, GaN band gap contains the oxidation and reduction level of water, so it can split water without external voltage. However, STH efficiency using GaN itself is low and has been actively studied recently to improve it. In this thesis, we have summarized the studies related to the use of GaN as a photoelectrode for photoelectrochemical water splitting.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.463-473
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• 2023

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.