Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Recent Advances in a-IGZO Thin Film Transistor Devices: A Short Review

  • Jingwen Chen (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Fucheng Wang (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Yifan Hu (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Jaewoong Cho (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Yeojin Jeong (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Duy Phong Pham (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Junsin Yi (College of Information and Communication Engineering, Sungkyunkwan University)
  • Received : 2023.05.30
  • Accepted : 2023.06.25
  • Published : 2023.09.01
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Abstract

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No.NRF-2022R1A4A1028702).

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