References
- E Fortunato, P Barquinha, R Martins., "Oxide semiconductor thin-film transistors: a review of recent advances," Advanced materials, 24.22: 2945-2986. (2012). https://doi.org/10.1002/adma.201103228
- Park, J. S., Kim, H., & Kim, I. D.. Overview of electroceramic materials for oxide semiconductor thin film transistors. Journal of Electroceramics, 32(2-3), 117-140, (2014). https://doi.org/10.1007/s10832-013-9858-0
- Kim, M., Sun, W., Kang, J., & Shin, H. The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT. Semiconductor Science and Technology, (2017).
- S.H. Chen, H.C. Liu, and C.Y. Lee, J.Y. Gan, H.W. Zan, and J.C. Hwang a, Y.Y. Cheng c, P.C. Lyu, "High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein" Organic Electronics, 24, 200-204. (2015). https://doi.org/10.1016/j.orgel.2015.05.046
- J.H. Kang, E.N. Cho, C.E. Kim, and M.J. Lee, S.J. Lee, J.M. Myoung "Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment" Appl Phys Lett, 102 : 222103, (2013). https://doi.org/10.1063/1.4809727
- Cho, S. H., Choi, M. J., Chung, K. B., & Park, J. S.. Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation. Electronic Materials Letters, 11(3), 360-365, (2015). https://doi.org/10.1007/s13391-015-4442-1
- Hwang, Y. H., An, H. M., & Cho, W. J. Performance improvement of the resistive memory properties of InGaZnO thin films by using microwave irradiation. Japanese Journal of Applied Physics, 53(4S), 04EJ04. (2014). https://doi.org/10.7567/JJAP.53.04EJ04
- Dao, V. D., Tran, C. Q., Ko, S. H., & Choi, H. S. Dry plasma reduction to synthesize supported platinum nanoparticles for flexible dye-sensitized solar cells. Journal of Materials Chemistry A, 1(14), 4436-4443, (2013). https://doi.org/10.1039/c3ta10319f
- Trinh, T. T., Nguyen, V. D., Ryu, K., Jang, K., Lee, W., Baek, S., Raja. J., Yi, J. "Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer." Semiconductor Science and Technology, 26(8), 085012, (2011). https://doi.org/10.1088/0268-1242/26/8/085012
- Xiao-Ming, H., Chen-Fei, W., Hai, L., Fang-Fang, R., Hong-Bo, Z., & Yong-Jin, W. "The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs". Chinese Physics Letters, 32(7), 077303, (2015). https://doi.org/10.1088/0256-307X/32/7/077303
- Jie, W., Junfei, S., Chengyuan, D., Zhongfei, Z., Yuting, C., Daxiang. Zhe.H., Runze.Z. "Effect of active layer deposition temperature on the performance of sputtered amorphous In-Ga-Zn-O thin film transistors." Journal of Semiconductors, 35(1), 014003, (2014). https://doi.org/10.1088/1674-4926/35/1/014003
- Tak, Y. J., Yoon, D. H., Yoon, S., Choi, U. H., Sabri, M. M., Ahn, B. D. and Kim, H. J. (2014). "Enhanced Electrical Characteristics and Stability Via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In-Ga-Zn-O Thin-Film Transistors," ACS Appl. Mater. Interfaces, vol. 6, pp. 6399-6405, (2014). https://doi.org/10.1021/am405818x
- Liu, P., Chen, T. P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y. and Leong, K. C. (2013). "Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors," ECS Solid State Lett., vol. 2, pp. Q21-Q24, (2013). https://doi.org/10.1149/2.005304ssl
- Trinh, T. T., Nguyen, V. D., Ryu, K., Jang, K., Lee, W., Baek, S., Raja.J., & Yi, J. Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer. Semiconductor Science and Technology, 26(8), 085012, (2011). https://doi.org/10.1088/0268-1242/26/8/085012