• Economic and Environmental Geology
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• v.42 no.5
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• pp.501-507
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• 2009

Ordered single-walled hollow aluminogermanate (ALGE) nano-balls(NBs) and nano-tubes(NTs) have been self-assembled from the ALGE precursors having an Al/Ge ratio of 1.33 using simple pH-control. The hollow ALGE NBs with average monodisperse diameters of 5 nm and chemistry of Al/Ge=1.5~1.6 were formed through structural assembly in the ALGE solution (Al/Ge=1.33) highly basified to pH=13(Na/Al=28~30) and followed by immediate acidification to pH=9. When the basified solution(pH=13) were acidified to pH=4, ALGE S-NTs (Short-fiber nano-tubes) with diameters of 3.3 nm, 15~20 nm in length, and chemistry of Al/Ge=2.6~2.8 were successfully synthesized. Whereas the solution was basified to pH=9, and subsequently acidified to pH=4, L-NTs(Long-fiber nano-tubes) with >100 nm in length were synthesized for the first time. The self-assembly of the hollow NBs, S-NTs, and L-NTs form the ALGE precursors can be explained by the degree of $H^+$-dissociation of the -Ge-OH inner surfaces, which was controlled by amount of $Na^+$ and pH conditions of ALGE precursor solutions. This results indicate that target forms of ALGE nanomaterials can be synthesized by simple pH controls.

• Journal of Microbiology and Biotechnology
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• v.11 no.1
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• pp.1-6
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• 2001

Ten strains of plasmid-harboring Bifidobacterium sp. were isolated from the feces of adults and children, and named as Bifidobacterium sp. GE1-GE8, ST, and SH5. These plasmids were categorized into three homologous groups (pKJ50-homologous, pKJ36-homologous, and non-homologous groups) according to Southern hybridization patterns using the formerly characterized bifidobacterial plasmids, pKJ50 and pKJ36, as probes. nine strains harboring the plasmids were shown to accumulate single-stranded DNA as a replication intermediate, based on the S1 nuclease treatment and Southern hybridization. These results suggest that the strains replicate by a rolling circle mechanism. Minimal inhibitory concentrations (MIC) of the isolated bifidobacteria against several antibiotics were determined. Two strains, GE2 and GE3, showed relatively high MiC values against tetracycline ($793.6{\mu}g/ml$) and erythromycin ($153.6{\mu}g/ml$), respectively. The tetracycline resistance of GE2 disappeared when the resident plasmid of GE2 was cured by ethidium bromide. These results show that pKJ36-homologous and pKJ50-homologous plasmids are prevalent among various Bifidobacterium strains and some Bifidobacterium plasmids appear to code for antibiotic resistance.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1428-1429
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• 2006

We investigated the diffraction efficiency, erasing property and rewriting property of diffraction grating with each wavelength of recording beam. A (P:P) polarized light was exposed on AsGeSeS and Ag/AsGeSeS thin film to form a diffraction grating by HeNe(635nm) laser and DPSS(532nm) laser. At the maximum efficiency condition, unpolarized HeNe laser beam was irradiated to erase 1ha generated diffraction grating. The HeNe laser showed more higher diffraction efficiency and the DPSS laser showed more faster diffraction grating time. At erasing and rewriting process, AsGeSeS(61%-85%)thin film showed better property than Ag doped Ag/AsGeSeS(53%-63%) double layer structured thin film.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.94-94
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• 2008

We have performed simulation for Junction Field Effect Transistor(JFET) using Silvco to improve its electrical properties. The device structure and process conditions of Si-control JFET(Si-JFET) were determined to set its cut off voltage and drain current(at Vg=0V) to -0.5V and $300{\mu}A$, respectively. From electrical property obtained at various implantation energy, dose, and drive-in conditions of p-gate doping, we found that the drive in time of p-type gate was the most determinant factor due to severe diffusion. Therefore we newly designed SiGe-JFET, in which SiGe layer is to epitaxial layers placed above and underneath of the Si-channel. The presence of SiGe layer lessen the p-type dopants (Boron) into the n-type Si channel the phenomenon would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer will be discussed in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• Korean Journal of Medicinal Crop Science
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• v.3 no.1
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• pp.45-49
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• 1995

This study was carried out to examine the germanium contents of Angelica keiskei Koidz. and A. acutiloba Kitagawa and to intend to increase its contents while those leaf explants were culturing on MS medium supplemented with organic and inorganic germanium. Ge content of Agelica keiskei Koidz. was 2.1 times higher than that of A. acutiloba Kitagawa. Digestion was done quickly at high temperature, but Ge content was decreased. Callus formation of A. acutiloba Kitagawa was better than that of A. keiskei Koidz. Callus formation of both plants was good in order of pH 5.7, pH 5.4, and pH 6.0. But shoots from callus were formed frequently in A. keiskei Koidz., especially at pH 5.7. Callus formation of both plants was good up to 5 ppm of inorganic ($germanium(GeO_2),$ retarded at 10 ppm, and rarely formed at 100 ppm, but was good up to 10ppm of organic germanium retarded at 50 ppm and formed some-what even at 100 ppm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.847-853
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• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.

• Reproductive and Developmental Biology
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• v.28 no.3
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• pp.173-179
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• 2004

This study was conducted to investigate the toxi-cological effects of different vitrification solution on development of immature porcine oocytes in vitro. Oocytes were exposed to EFS solution [40% ethylene glycol (EG) + 18% Ficoll + 0.3M sucrose], ES solution (5.5M EG + 1.0M sucrose) or GE solution [10% glycol (G) + 20% EG], and these oocytes were transferred to sucrose solution directly. Maturation rates were significantly (P<0.05) higher in the ES solution (44.5%) and control (57.6%) than in the EFS solution (38.8%) and GE solution (22.4%). No differences among three solution were found in fertilization rates. Cleavage rates was significantly (P<0.05) higher in the ES solution (47.1%) and control (65.9%) than in the EFS solution (21.9%) and GE solution (19.0%), but no difference among three solutions was found in the blastocyst formation rates. These results indicate that combination of EG and sucrose solutions had effects on development of immature porcine oocytes.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.