References
- S. Jayanarayanan, F. Prins, X. Chen, and S. Banerjee, Mater. Res. Soc. Symp. Proc., 686, A2.8 (2002). [DOI: https://doi.org/10.1557/PROC-686-A2.8]
- W. P. Maszara, Mater. Res. Soc. Symp. Proc., 686, A2.5 (2002). [DOI: https://doi.org/10.1557/PROC-686-A2.5]
- A. G. O'Neill and D. A. Antoniadis, IEEE Trans. Electron Devices, 43, 911 (1996). [DOI: https://doi.org/10.1109/16.502123]
- Z. Shi, X. Chen, D. Onsongo, E. J. Quinones, and S. K. Banerjee, Solid-State Electron., 44, 1223 (2000). [DOI: https://doi.org/10.1016/S0038-1101(00)00031-9]
- J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, and J. E. Carceller, Semicond. Sci. Technol., 12, 1603 (1997). [DOI: https://doi.org/10.1088/0268-1242/12/12/010]
- J. P. Dismukes, L. Ekstrom, E. F. Steigmeier, I. Kudman, and D. S. Beers, J. Appl. Phys., 35, 2899 (1964). [DOI: https://doi.org/10.1063/1.1713126]
- H. Morkoc, B. Sverdlov, and G. B. Gao, Proc. IEEE, 81, 493(1993). [DOI: https://doi.org/10.1109/5.219338]
- J. D. Cressler, E. F. Crabbe, J. H. Comfort, J.Y.C. Sun, and J.M.C. Stork, IEEE Electron Device Lett., 15, 472 (1994). [DOI: https://doi.org/10.1109/55.334671]
- L. D. Lanzerotti, A. S. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, and D. Theodore, IEEE Electron Device Lett., 17, 334 (1996). [DOI: https://doi.org/10.1109/55.506359]
- K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, and T. Onai, Proc. International Electron Devices Meeting. IEDM Technical Digest (IEEE, Washington, USA, 1997). p. 795.
- D. L. Harame and B. S. Meyerson, IEEE Trans. Electron Devices, 48, 2555 (2001). [DOI: https://doi.org/10.1109/16.960383]
- J. D. Cressler, SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices (FL. CRC Press, New York, 2008) p. 89.
- J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985) p. 52.
- W. Moller, W. Eckstein, and J. P. Biersack, Comput. Phys. Commun., 51, 355 (1998). [DOI: https://doi.org/10.1016/0010-4655(88)90148-8]
- W. Moller and W. Eckstein, Nucl. Instrum. Methods B, 2, 814 (1984). [DOI: https://doi.org/10.1016/0168-583X(84)90321-5]
- J. P. Biersack, S. Berg, and C. Nender, Nucl. Instrum. Methods B, 59, 21 (1991). [DOI: https://doi.org/10.1016/0168-583x(91)95167-c]
- H. Ryssel, J. Lorenz, and K. Hoffmann, Appl. Phys., A41, 201 (1986). [DOI: https://doi.org/10.1007/bf00616841]
- S. H. Yang, S. J. Morris, D. L. Lim, A. F. Tasch, R. B. Simonton, D. Kamenitsa, C. Magee, and G. Lux, J. Electron. Mater., 23, 801 (1994). [DOI: https://doi.org/10.1007/bf02651376]
- K. M. Klein, C. Park, and A. F. Tasch, Nucl. Instrum. Methods B, 59, 60 (1991). [https://doi.org/10.1016/0168-583x(91)95175-d]
- L. A. Edelman, M. S. Phen, K. S. Jones, R. G. Elliman, and L. M. Rubin, Appl. Phys. Lett., 92, 172108 (2008). [DOI: https://doi.org/10.1063/1.2919085]
- P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, and D. Lefforge, Appl. Phys. Lett., 66, 580 (1995). [DOI: https://doi.org/10.1063/1.114019]
- R. Wittmann, S. Uppal, A. Hossinger, J. Cervenka, and S. Selberherr, ECS Trans., 3, 667 (2006). [DOI: https://doi.org/10.1149/1.2355862]
- C. C. Wang, Y. M. Sheu, S. Liu, R. Duffy, A. Heringa, N.E.B. Cowern, and P. B. Griffin, Mater. Sci. Eng., B, 124, 39 (2005). [DOI: https://doi.org/10.1016/j.mseb.2005.08.127]