Browse > Article
http://dx.doi.org/10.4313/TEEM.2014.15.6.324

Characterization of Conduction Mechanism in Cu Schottky Contacts to p-type Ge  

Kim, Se Hyun (Department of Visual Optics, Seoul National University of Science and Technology (Seoultech))
Jung, Chan Yeong (Department of Visual Optics, Seoul National University of Science and Technology (Seoultech))
Kim, Hogyoung (Department of Visual Optics, Seoul National University of Science and Technology (Seoultech))
Publication Information
Transactions on Electrical and Electronic Materials / v.15, no.6, 2014 , pp. 324-327 More about this Journal
Abstract
Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.
Keywords
p-type Ge; Schottky barrier heights; Ideality factors; Poole-Frenkel effect;
Citations & Related Records
연도 인용수 순위
  • Reference
1 D. Kuzman, K. Martens, T. Krishnamohan, and K. Saraswat, Appl. Phys. Lett., 95, 252101 (2009). [DOI: http://dx.doi.org/10.1063/1.3270529].   DOI
2 P. Lim, D. Chi, X. Wang, and Y. Yeo, Appl. Phys. Lett., 101, 172103 (2012). [DOI: http://dx.doi.org/10.1063/1.4762003].   DOI
3 T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett., 91, 123123 (2007). [DOI: http://dx.doi.org/10.1063/1.2789701].   DOI
4 V. Kolkovsky, S. Klemm, M. Allardt, and J. Weber, Semicond. Sci. Technol., 28, 025007 (2013). [DOI: http://dx.doi.org/stacks.iop.org/SST/28/025007].   DOI
5 Z. Khurelbaatar, Y. Kil, H. Yun, K. Shim, J. Nam, K. Kim, S. Lee, and C. Choi, J. Alloys Compd., 614, 323 (2014). [DOI: http://dx.doi.org/10.1016/j.jallcom.2014.06.132].   DOI
6 R. King, D. Law, K. Edmondson, C. Fetzer, G. Kinsey, H. Yoon, R. Sherif, and N. Karam, Appl. Phys. Lett., 90, 183516 (2007). [DOI: http://dx.doi.org/10.1063/1.2734507].   DOI   ScienceOn
7 P. Clauws, G. Huylebroeck, E. Simoen, P. Vermaercke, F. Smet, and J. Vennik, Semicond. Sci. Technol., 4, 910 (1989). [DOI: http://dx.doi.org/10.1088/0268-1242/4/11/003].   DOI
8 V. Thathachary, N. Bhat, N. Bhat, and S. Hegde, Appl. Phys. Lett., 96, 152108 (2010). [DOI: http://dx.doi.org/10.1063/1.3387760].   DOI
9 V. Janardhanam, H. Yun, J. Lee, V. Reddy, H. Hong, K. Ahne, and C. Choi, Scripta Mater., 69, 809 (2011). [DOI: http://dx.doi.org/10.1016/j.scriptamat.2013.09.004].   DOI
10 T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Exp., 1, 051406 (2008). [DOI: http://dx.doi.org/10.1143/APEX.1.051406].   DOI
11 V. Kishore, P. Paramahans, S. Sadana, U. Ganguly, and S. Lodha, Appl. Phys. Lett., 100, 142107 (2012). [DOI: http://dx.doi.org/10.1063/1.3700965].   DOI
12 D. Liu and C. Lee, J. Appl. Phys., 92, 987 (2002). [DOI: http://dx.doi.org/10.1063/1.1487439].   DOI
13 S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) p. 270.
14 J. Sullivan, R. Tung, M. Pinto, and W. Graham, J. Appl. Phys., 70, 7403 (1991). [DOI: http://dx.doi.org/10.1063/1.349737].   DOI
15 S. Cheung and N. Cheung, Appl. Phys. Lett., 49, 85 (1986). [DOI: http://dx.doi.org/10.1063/1.97359].   DOI
16 H. Norde, J. Appl. Phys., 50, 5052 (1979). [DOI: http://dx.doi.org/10.1063/1.325607].   DOI
17 M. Sharma and S. Tripathi, J. Appl. Phys., 112, 024521 (2012). [DOI: http://dx.doi.org/10.1063/1.4737589].   DOI
18 J. Simmons, J. Phys. D: Appl. Phys., 4, 613 (1971). [DOI: http://dx.doi.org/10.1088/0022-3727/4/5/202].   DOI
19 A. Kumar, V. Reddy, V. Janardhanam, M. Seo, H. Hong, K. Shin, and C. Choi, J. Electrochem. Soc., 159, H33 (2012). [DOI: http://dx.doi.org/10.1149/2.041201jes].   DOI
20 J. Lin, S. Banerjee, J. Lee, and C. Teng, IEEE Electron Device Lett., 11, 191 (1990). [DOI: http://dx.doi.org/10.1109/55.55246].   DOI   ScienceOn
21 M. Kobayashi, A. Kinoshita, K. Saraswat, H. Wong, and Y. Nishi, J. Appl. Phys., 105, 023702 (2009). [DOI: http://dx.doi.org/10.1063/1.3065990].   DOI
22 A. Chroneos, U. Schwingenschlog, and A. Dimoulas, Ann. Phys., 524, 123 (2012). [DOI: http://dx.doi.org/10.1002/andp.201100246].   DOI
23 A. Cros, M. Aboelfotoh, and K. Tu, J. Appl. Phys., 67, 3328 (1990). [DOI: http://dx.doi.org/10.1063/1.345369].   DOI