• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.303.1-303.1
• /
• 2014

좋은 전기적 특성을 가지면서 소자의 크기를 줄이기에 용이한 Gate-all-around (GAA) twin Si nanowire field-effect transistors (TSNWFETs)의 연구가 많이 진행되고 있다. Switching 특성과 단채널 효과가 없는 TSNWFETs의 특성은 GAA 구조의 본질적인 특성이다. TSNWFETs는 기존의 single Si nanowire TSNWFETs와 bulk FET에 비하여 Drive current가 nanowire의 지름에 많은 영향을 받지 않는다. 그러나 TSNWFETs의 전체 on-current는 훨씬 작고 nanowire의 지름이 작아지면서 줄어들게 되면서 소자의 sensing speed와 sensing margin 특성의 악화를 가지고 온다. GAA TSNWFETs의 제작 및 전기적 실험에 대한 연구는 많이 진행되었으나, GAA TSNWFETs의 전기적 특성에 대한 이론적 연구는 매우 적다. 본 연구에서는 GAA TSNWFETs의 nanowire 크기에 따른 전기적 특성을 관찰하였다. GAA TSNWFETs와 bulk FET의 전기적 특성을 양자역학을 고려하여 3차원 TCAD 시뮬레이션을 툴을 이용하여 계산하였다. GAA TSNWFETs와 bulk FET의 전류-전압 특성 계산을 통해 on-current 크기, subthreshold swing, drain-induced barrier lowering (DIBL), gate-induced drain leakage를 보았다. 전류가 흐르는 경로와 전기적 특성의 물리적 의미에 대한 연구를 위해 TSNWFETs에서의 전류 밀도, conduction band edge, potential 특성을 분석하였다. 시뮬레이션 결과를 통해 Switching 특성, 단채널 효과에 대한 면역 특성, nanowire의 단면적에 따른 전류 흐름을 보았다. nanowire의 크기가 작아지면서 DIBL이 증가하고 문턱전압과 전체 on-current는 감소하면서 소자의 특성이 악화된다. 이러한 결과는 GAA TSNWFETs의 전기적 특성을 이해하고 좋은 소자 특성을 위한 구조를 연구하는데 많은 도움이 될 것이다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.9
• /
• pp.1771-1777
• /
• 2016

In this thesis, the breakdown voltage characteristics of silicon nanowire N-channel GAA MOSFETs were analyzed through experiments and 3-dimensional device simulation. GAA MOSFETs with the gate length of 250nm, the gate dielectrics thickness of 6nm and the channel width ranged from 400nm to 3.2um were used. The breakdown voltage was decreased with increasing gate voltage but it was increased at high gate voltage. The decrease of breakdown voltage with increasing channel width is believed due to the increased current gain of parasitic transistor, which was resulted from the increased potential in channel center through floating body effects. When the positive charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was decreased due to the increased potential in channel center. When the negative charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was increased due to the decreased potential in channel center. We confirmed that the measurement results were agreed with the device simulation results.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.11
• /
• pp.219-225
• /
• 2013

Program and erase characteristics of the elliptic gate all around (e-GAA) SONOS cell have been studied as the variation of eccentricity of the channel. An analytic program and erase model for the elliptic GAA SONOS cell is proposed and evaluated. The model shows that the ISPP (incremental-step-pulse programming) property is changed non-linearly as the eccentricity of the e-GAA SONOS cell is increased. It is differently from the well known linear relationship for that of 2D SONOS and even 3D circular SONOS cell with program bias. We can find that the simulation results of ISPP characteristics are in accord with the experimental data.

• Informatization Policy
• /
• v.30 no.4
• /
• pp.113-137
• /
• 2023

This study aims to conduct the classification of Government as a Platform (GaaP) in a situation where the concept of GaaP can be diversely recognized. This is because inclusiveness and ambiguity in the concept of GaaP can hinder policy enforcement by working-level officials in the public sector. It drew the criteria for classification for GaaP based on literature and cases for GaaP. In the technical aspect, considering data as an overarching factor, the integrated system platform integrating the information system or websites of the public sector and the data platform as a single portal for open data to external stakeholders were sorted. In the governance aspect considering stakeholder as an overarching factor, the communication platform utilized for interaction between public and private sectors and the co-creation platform that encourages public-private partnership to create innovative outcomes were sorted. It suggested an actual implementation case and the policy implication according to each type of GaaP. Additionally, according to the classification of GaaP, it conducted contents analysis as to which type of GaaP the domestic Digital Platform Government belongs to based on its detailed assignment. Based on the classification of GaaP, it drew balanced implementation for various types of GaaP, plan for promoting the participation and collaboration of stakeholders, and necessity of restructuring and reinventing of the public sector as policy implications for the domestic digital platform government.

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.5-8
• /
• 2002

Hot carrier induced device degradation is observed in thin-film, gate-all-around SOI transistor under DC stress conductions. We observed the more significant device degradation in GAA device than general single gate SOI device due to the degradation of edge transistor. Therefore, it is expected that the maximum available supply voltage of GAA transistor is lower than that o( bulk MOSFET or single gale SOI device.

• Korean Journal of Microbiology
• /
• v.34 no.4
• /
• pp.231-235
• /
• 1998

We have introduced a genetic assay to study the existence of intramolecular triplexes in Escherichia coli. A plasmid containing the gene that encodes a temperature-sensitive EcoRI methylase was cotransformed with different plasmids containing inserts, $(G)_9AATTC(G)_9$ and $(GAA)_9TTC(GAA)_8$, that are able to form intramolecular triplexes in vitro. Inhibition of methylation in vivo was found for $(G)_9AATTC(G)_9$ and $(GAA)_9TTC(GAA)_8$, suggesting that the pur pyr sequences adopt unusual strucures in E. coli. In addition, experiments using two dimensional gel electrophoresis confirmed that intramolecular triplexes are formed for the pur pyr sequences under negative supercoiling. These results demonstrate the existence of intramolecular triplexes in E. coli.

• Journal of The Korean Society of Inherited Metabolic disease
• /
• v.12 no.1
• /
• pp.42-48
• /
• 2012

Pompe disease is a rare lysosomal glycogen storage disorder caused by a total or partial deficiency of the acid ${\alpha}$-glucosidase (GAA) enzyme due to the GAA gene mutations. The classic infantile form of Pompe disease is a rapidly progressive multi-organ disease with hypotonia, generalized muscle weakness, and hypertrophic cardiomyopathy, usually leading to death in the first 2 years of life. Enzyme replacement therapy with recombinant human GAA has been shown to be effective and subsequently yielded promising results. Here, we present clinical and genetic characteristics of three Korean non-classic infantile Pompe patients, and the short term efficacy of enzyme replacement therapy. Considering that enzyme replacement therapy can change the natural course of infantile Pompe disease, early diagnosis and early initiation of treatment is critical to improving patient outcomes.

• Animal Bioscience
• /
• v.36 no.12
• /
• pp.1898-1904
• /
• 2023

Objective: This study aimed to investigate the effect of dietary guanidinoacetic acid (GAA) on the growth performance, slaughter traits, myofiber, and adenine nucleotide of meat-type rabbits. Methods: Experimental treatments consisted of control (CON) and GAA addition at 0.04% (T1), 0.08% (T2), and 0.12% (T3) of diet. A total of 240 weaned rabbits (meat-type male Chinese black rabbits) were randomly distributed into four groups with six replicates of ten rabbits each. Results: Results showed that the three doses of GAA increased (p<0.05) final body weight, carcass weight, the density and area of quadriceps femoris fiber; and T3 showed significant effects (p<0.05) on weight gain, feed/gain, and dressing percentage, and the traits of longissimus fiber, compared to CON. Dietary GAA increased (p<0.05) the meat color a^* and b^* in longissimus and quadriceps; and T3 showed the lowest (p<0.05) shear force of longissimus. Furthermore, GAA increased (p<0.05) the contents of adenosine triphosphate and total adenine nucleotide in longissimus and quadriceps. In longissimus adenosine triphosphate, total adenine nucleotide, and adenylate energy charges, T3 treatment was most effective (p<0.05); while T2 and T3 treatment was more effective (p<0.05) than T1 in quadriceps. Additionally, linear or quadratic responses (p<0.05) to the increased doses of GAA were found on body weight gain, meat color, total adenine nucleotide, and adenylate energy charges. Conclusion: It is concluded that GAA can be used in the rabbit diet to improve growth and carcass traits, and these are related to the high levels of muscle adenine nucleotide.

• Journal of The Korean Society of Inherited Metabolic disease
• /
• v.5 no.1
• /
• pp.18-22
• /
• 2005

Pompe disease is a genetic disorder caused by a deficiency of acid ${\alpha}$-glucosidase (GAA). This enzyme defect results in lysosomal glycogen accumulation in multiple tissues and cell types, with cardiac, skeletal, and smooth muscle cells the most seriously affected. Infantile-onset Pompe disease is uniformly lethal. Affected infants present in the first few months of life with hypotonia, generalized muscle weakness, and a hypertrophic cardiomyopathy, followed by death from cardiorespiratory failure or respiratory infection, usually by 1 year of age. Late-onset forms is characterized by a lack of severe cardiac involvement and a less severe short-term prognosis. Enzyme replacement therapy for Pompe disease is intended to address directly the underlying metabolic defect via intravenous infusions of recombinant human GAA to provide the missing enzyme. We experienced one case of Pompe disease in 3-years old boy that has improved his exercise ability and cardiac function after GAA enzyme replacement therapy.

• Electronics and Telecommunications Trends
• /
• v.38 no.6
• /
• pp.52-61
• /
• 2023

With semiconductor scaling approaching the physical limits, devices including CMOS (complementary metal-oxide-semiconductor) components have managed to overcome yet are currently struggling with several technical issues like short-channel effects. Evolving from the process node of 22 nm with FinFET (fin field effect transistor), state-of-the-art semiconductor technology has reached the 3 nm node with the GAA-FET (gate-all-around FET), which appropriately addresses the main issues of power, performance, and cost. Technical problems remain regarding the foundry of GAA-FET, and next-generation devices called post-GAA transistors have not yet been devised, except for the CFET (complementary FET). We introduce a CFET that spatially stacks p- and n-channel FETs on the same footprint and describe its structure and fabrication. Technical details like stacking of nanosheets, special spacers, hetero-epitaxy, and selective recess are more thoroughly reviewed than in similar articles on CFET fabrication.