Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Hot Carrier Induced Device Degradation in GAA MOSFET

Hot carrier에 의한 GAA MOSFET의 열화현상

  • 최락종 (인천대학교 전자공학과) ;
  • 이병진 (인천대학교 전자공학과) ;
  • 장성준 (여주대학 컴퓨터정보관리과) ;
  • 유종근 (인천대학교 전자공학과) ;
  • 박종태 (인천대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

Hot carrier induced device degradation is observed in thin-film, gate-all-around SOI transistor under DC stress conductions. We observed the more significant device degradation in GAA device than general single gate SOI device due to the degradation of edge transistor. Therefore, it is expected that the maximum available supply voltage of GAA transistor is lower than that o( bulk MOSFET or single gale SOI device.

Keywords