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http://dx.doi.org/10.5573/ieek.2013.50.11.219

Study of Program and Erase Characteristics for the Elliptic GAA SONOS Cell in 3D NAND Flash Memory  

Choi, Deuk-Sung (Dept. of Electronic & Information Engineering, YNC)
Lee, Seung-Heui (Dept. of Electronic & Information Engineering, YNC)
Park, Sung-Kye (Memory R&D Divison, SK Hynix)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.11, 2013 , pp. 219-225 More about this Journal
Abstract
Program and erase characteristics of the elliptic gate all around (e-GAA) SONOS cell have been studied as the variation of eccentricity of the channel. An analytic program and erase model for the elliptic GAA SONOS cell is proposed and evaluated. The model shows that the ISPP (incremental-step-pulse programming) property is changed non-linearly as the eccentricity of the e-GAA SONOS cell is increased. It is differently from the well known linear relationship for that of 2D SONOS and even 3D circular SONOS cell with program bias. We can find that the simulation results of ISPP characteristics are in accord with the experimental data.
Keywords
SONOS; Gate All Around (GAA); Elliptic; Program; Erase; Simulation; Electric Field; Threshold Voltage; Incremental Step Pulse Program;
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