• 한국표면공학회지
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• 제52권6호
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• 한국전자파학회논문지
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• 제20권8호
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• pp.714-720
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• 2009

본 논문에서는 초광대역 특성을 가지는 평면형 대역 가변 체배기의 설계 과정을 소개하고 있다. 제안된 체배기에서는 초광대역 마이크로스트립-CPS 전이 구조(발룬)를 입력단의 정합 회로로, 초광대역 마이크로스트립-CPW 전이 구조를 출력단의 정합 회로로 사용하였다. 입력단에 사용된 발룬 구조로 인해 다이오드에 바이어스를 가할 수 있는데, 구현된 체배기의 대역 가변은 다이오드에 인가되는 전압을 가변함으로써 얻을 수 있다. 바이어스 전압이 -0.6 V일 때 체배기의 동작 주파수는 $10{\sim}20$ GHz, 인가 전압이 $-0.2{\sim}-0.4$ V일 때 동작 주파수는 $10{\sim}30$ GHz, 인가 전압이 0 V일 때 동작 주파수는 $20{\sim}30$ GHz로 변함을 확인하였다. 또한, 구현된 체배기의 변환 손실은 최대 15 dB 이고, 입력 주파수의 억압 특성은 평균 30 dB 이상이 되는 우수한 특성을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.728-735
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• 2016

A 70 MHz temperature-compensated on-chip CMOS relaxation oscillator for mobile display driver ICs is proposed to reduce frequency variations. The proposed oscillator compensates for frequency variation with respect to temperature by adjusting the bias currents to control the change in delay of comparators with temperature. A bandgap reference (BGR) is used to stabilize the bias currents with respect to temperature and supply voltages. Additional temperature compensation for the generated frequency is achieved by optimizing the resistance in the BGR after measuring the output frequency. In addition, a trimming circuit is implemented to reduce frequency variation with respect to process. The proposed relaxation oscillator is fabricated using 45 nm CMOS technology and occupies an active area of $0.15mm^2$. The measured frequency variations with respect to temperature and supply voltages are as follows: (i) ${\pm}0.23%$ for changes in temperature from -30 to $75^{\circ}C$, (ii) ${\pm}0.14%$ for changes in $V_{DD1}$ from 2.2 to 2.8 V, and (iii) ${\pm}1.88%$ for changes in $V_{DD2}$ from 1.05 to 1.15 V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1846-1848
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• 1999

A technique is investigated for achieving broadband properties by controlling the operation frequency of microstrip antennas. The control is achieved by applying DC and AC bias to the microstrip antenna. Air gap antenna with pzt post and microstrip antenna with simple rectangular patch on the $LiNbO_3$ substrate were fabricated. In the case of Air gap antenna, the variation of operating frequency was 11Mhz and $LiNbO_3$ antennas was 11Mhz. Also, frequency scanning was achieved by appling AC bias.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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• pp.72-76
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• 2003

In this paper, active frequency doubler with broadband characteristics and unconditional stability from 6GHz to 12GHz was designed and fabricated using PHEMT. The designed frequency multiplier has a bias point near pinch-off and a proposed RC circuit between bias line and input matching network for the improvement of stability. With 0dBm input power, second harmonic of 1.7dBm at 12GHz, - 27.5dBc suppression of 6GHz fundamental, -18dBc suppression of 18GHz 3rd harmonic and the output bandwidth of 1.8GHz have been measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.195-198
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• 1999

A technique is investigated for achieving broadband properties by controlling the operation frequency of microstrip antennas. The control is achieved by applying DC bias to the microstrip antenna. Air gap antenna with PZT post is fabricated. by using in C-band. In the case of Air gap antenna, the variation of center frequency was about 16Mhz and the bandwidth was increased up to 123.3% at 15dB, 160.7% at 20dB than before applying DC bias respectively. The change property of frequency in air gap antenna is nearly the same the C-V property in PZT.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.220-225
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• 2018

A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.214-217
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• 1989

The most attractive feature of semiconductor lasers as sources for coherent optical communication system is the ability to produce frequency modulation by modulation of the bias current. The frequency deviation of semiconductor lasers under direct modulation depends on the laser structure and modulation frequency. This paper describes a circuit modeling techniques for the directly frequency modulated CSP (Channeled Substrated Planner) semiconductor laser. Predictions from this model are compared with the other published results of sinusoidal frequency modulation below than 1 GHz.

• 한국진공학회지
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• 제8권3B호
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• pp.346-352
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• 1999

Diamond-like carbon (DLC) lims were deposited by using end hall type ion gun. Benzene gas was used for the generation of carbon ions. In order to systematically control the ion energy, we applied to the substrate DC, pulsed DC or 250 kHz medium frequency bias voltage, DLC films of superior mechanical properties of hardness 39$\pm$4 GPa and elastic mudulus 290$\pm$50GPa (2 to 6 times better than those of the films deposited by plasma assisted CVD method) could be obtained. Deposition rate was much higher than when using Kaufman type ion source, which results from higher ion beam current of end hall type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type but intimately related with the magnitude of the bias voltage. With increasing the negative bias voltage, the structure of the films changed to graphitic one resulting in decreased content of three dimensional inter-links. Degradation of the mechanical properties with increasing bias voltage could be thus understood in terms of the content odf three dimensional inter-links.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1995년도 추계학술대회논문집; 한국종합전시장, 24 Nov. 1995
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• pp.80-85
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• 1995

Too see the effects of finite record on the estimation of WVD in practice, a window which has time varying length is examined. Its length increases linearly with time in the first half of the record, and decreases from the center of the record. The bias error due to this window decreases inversely proportionally to the window length as time increases in the first half. In the second half, the bias error increases and the resolution decreases as time increases. The bias error due to the smoothing of WVD, which is obtained by two-dimensional convolution of the true WVD and the smoothing window, which has fixed lengths along time and frequency axes, is derived for arbitrary smoothing window function. In the case of using a Gaussian window as a smoothing window, the bias error is found to be expressed as an infinite summation of differential operators. It is demonstrated that the derived formula is well applicable to the continuous WVD, but when WVD has some discontinuities, it shows the trend of the error. This is a consequence of the assumption of the derivation, that is the continuity of WVD. For windows other than Gaussian window, the derived equation is shown to be well applicable for the prediction of the bias error.