Pulsed DC Bias Effects on Substrate in TiNx Thin Film Deposition by Reactive RF Magnetron Sputtering at Room Temperature

반응성 RF 마그네트론 스퍼터링에 의한 TiNx 상온 성막에 있어서 기판 상의 펄스상 직류 바이어스 인가 효과

  • Kim, Seiki (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
  • 김세기 (한국세라믹기술원 이천분원 엔지니어링세라믹센터)
  • Received : 2019.11.30
  • Accepted : 2019.12.28
  • Published : 2019.12.31


Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N2/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiNx films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiNx films was decreased with application of the pulsed DC substrate bias voltage. The TiNx films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiNx films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.



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