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http://dx.doi.org/10.5695/JKISE.2019.52.6.342

Pulsed DC Bias Effects on Substrate in TiNx Thin Film Deposition by Reactive RF Magnetron Sputtering at Room Temperature  

Kim, Seiki (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean institute of surface engineering / v.52, no.6, 2019 , pp. 342-349 More about this Journal
Abstract
Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N2/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiNx films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiNx films was decreased with application of the pulsed DC substrate bias voltage. The TiNx films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiNx films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.
Keywords
$TiN_x$; RF reactive sputtering; Pulsed substrate DC Bias; XPS depth profile;
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