• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.763-768
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

• 마이크로전자및패키징학회지
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• 제6권4호
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• pp.61-71
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• 1999

통신분야에서 사용주파수대역의 증가, 제품의 소형화 및 가격경쟁력등의 요구에 따라 RF 소자의 패키징 기술도 플라스틱 패키지 대신에 flip chip interconnection, MCM(multichip module)등과 같은 고밀도 실장기술이 발전해가고 있다. 따라서, 본 논문은 최근 수년간 보고된 응용사례를 중심으로 RF flip chip의 기술적인 개발방향과 장점들을 분석하였고, RF 소자 및 시스템의 개발단계에 따른 적합한 적용기술을 제시하였다. RF flip chip의 기술동향을 요약하면, 1) RF chip배선은 microstrip 대신에 CPW 구조을 선택하며, 2) wafer back-side grinding을 하지 않아서 제조공정이 단순하고 wafer 파손이 적어 제조비용을 낮출 수 있고, 3) wire bonding 패키징에 비해 전기적인 특성이 우수하고 고집적의 송수신 모듈개발에 적합하다는 것이다. 그러나, CPW 배선구조의 RF flip chip 특성에 대한 충분한 연구가 필요하며 RF flip chip의 초기 개발 단계에서 flip chip interconnection 방법으로는 Au stud bump bonding이 적합할 것으로 제안한다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.469-470
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.519-520
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• 2008

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 International Symposium
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• pp.253-257
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• 2003

The low temperature flip chip technique is applied to the package of the temperature-sensitive devices for LCD systems and image sensors since the high temperature process degrades the polymer materials in their devices. We will introduce the various low temperature flip chip bonding techniques; a conventional flip chip technique using eutectic Bi-Sn (mp: $138^{\circ}C$) or eutectic In-Ag (mp: $141^{\circ}C$) solders, a direct bump-to-bump bonding technique using solder bumps, and a low temperature bonding technique using low temperature solder pads.

• Journal of Welding and Joining
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• 제20권4호
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of Welding and Joining
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• 제26권3호
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.17-24
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• 2012

Recently, flip chip interconnection has been increasingly used in microelectronic assemblies. The common Flip chip interconnection is formed by reflow of the solder bumps. Lead-Tin solders and Tin-based solders are most widely used for the solder bump materials. However, the flip chip interconnection using these solder materials cannot be applied to temperature-sensitive components since solder reflow is performed at relatively high temperature. Therefore the development of low temperature bonding technologies is required in these applications. A few bonding techniques at low temperature of $150^{\circ}C$ or below have been reported. They include the reflow soldering using low melting point solder bumps, the transient liquid phase bonding by inter-diffusion between two solders, and the bonding using low temperature curable adhesive. This paper reviews various low temperature bonding methods.

• 한국공작기계학회논문집
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• 제17권1호
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• pp.120-125
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• 2008

A flip-chip bonding system using DPSS(Diode Pumped Solid State) Nd:YAG laser(wavelength : 1064nm) which shows a good quality in fine pitch bonding is developed. This laser bonder can transfer beam energy to the solder directly and melt it without any physical contact by scanning a bare chip. By using a laser source to heat up the solder balls directly, it can reduce heat loss and any defects such as bridge with adjacent solder, overheating problems, and chip breakage. Comparing to conventional flip-chip bonders, the bonding time can be shortened drastically. This laser precision micro bonder can be applied to flip-chip bonding with many advantage in comparison with conventional ones.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 2nd Korea-Japan Advanceed Semiconductor Packaging Technology Seminar
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• pp.39-45
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• 2000

A small camera module fabricated by including bare chip bonding methods is utilized to realize advanced mobile devices. One of the driving forces is the TOG (Tape On Glass) bonding method which reduces the packaging size of the image sensor clip. The TOG module is a new thinner and smaller image sensor module, using flip chip interconnection method with the ACP (Anisotropic Conductive Paste). The TOG production process was established by determining the optimum bonding conditions for both optical glass bonding and image sensor clip bonding lo the flexible PCB. The bonding conditions, including sufficient bonding margins, were studied. Another bonding method is the flip chip bonding method for DSP (Digital Signal Processor) chip. A new AC\ulcorner was developed to enable the short resin curing time of 10 sec. The bonding mechanism of the resin curing method was evaluated using FEM analysis. By using these flip chip bonding techniques, small camera module was realized.