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Effect of Plasma Treatment on the Bond Strength of Sn-Pb Eutectic Solder Flip Chip  

홍순민 ((주)삼성전자 메카트로닉스센터 지능시스템연구소 마이크로접합 Lab)
강춘식 (서울대학교 재료공학부)
정재필 (서울시립대학교 재료공학과)
Publication Information
Journal of Welding and Joining / v.20, no.4, 2002 , pp. 498-504 More about this Journal
Abstract
Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.
Keywords
Flip chip; Solder; Plasma; Fluxless; Shear strength; Oxide layer;
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