• 대한전자공학회논문지SD
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• 제49권1호
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• pp.8-14
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• 2012

전체 채널 폭은 같지만 핀 수와 핀 폭이 다른 n-채널 MuGFET의 특성을 측정 비교 분석하였다. 사용된 소자는 Pi-gate 구조의 MuGFET이며 핀 수가 16이며 핀 폭이 55nm인 소자와 핀 수가 14이며 핀 폭이 80nm인 2 종류의 소자이다. 측정 소자성능은 문턱전압, 이동도, 문턱전압 roll-off, DIBL, inverse subthreshold slope, PBTI, hot carrier 소자열화 및 드레인 항복전압 이다. 측정 결과 핀 폭이 작으며 핀 수가 많은 소자의 단채널 현상이 우수한 것을 알 수 있었다. PBTI에 의한 소자열화는 핀 수가 많은 소자가 심하며 hot carrier에 의한 소자열화는 비슷한 것을 알 수 있었다. 그리고 드레인 항복 전압은 핀 폭이 작고 핀 수가 많은 소자가 높은 것을 알 수 있었다. 단채널 현상과 소자열화 및 드레인 항복전압 특성을 고려하면 MuGFET소자 설계 시 핀 폭을 작게 핀 수를 많게 하는 것이 바람직하다.

• 대한기계학회논문집B
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• 제25권1호
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• pp.1-8
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• 2001

Performance of a rectangular fin is investigated by a three dimensional analytical method. Heat loss and the temperature obtained from the three dimensional analysis are compared with those calculated from a two dimensional analysis. Fin effectiveness, fin resistance and fin efficiency for the rectangular fin are presented as a function of non-dimensional fin length and fin width. The results are obtained in the following : (1) heat loss calculated from the two dimensional analysis is the same as that obtained from the three dimensional analysis with adiabatic boundary condition in z-direction, (2) heat loss obtained from the two dimensional analysis approaches the value for the three dimensional analysis as the non-dimensional fin width becomes large, (3) fin effectiveness increases as non-dimensional fin length increases and non-dimensional fin width decreases, and vice versa for fin efficiency.

• 설비공학논문집
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• 제10권6호
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• pp.743-752
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• 1998

Experiments were performed to characterize single-phase heat transfer behavior of submerged liquid jet with multiple nozzle normally impinging on the smooth and extended surfaces. Arrays of 9 and 36 nozzles were used, with diameters of 0.5 to 2.0mm providing nozzle area ratio (AR) from 0.05 to 0.2. The square pin fin arrays were chosen as extended surfaces and the effects of geometrical parameters such as fin height, the ratio of fin width to channel width on heat transfer enhancement were examined. Single nozzle characteristics were also evaluated for comparison. The results clearly showed that heat transfer enhancement could be realized by using multiple nozzles at the constant volume flow rate. The average Nusselt number of multiple nozzle impingement on the smooth surface was correlated by the following equation : Nu/$Pr\frac{1}{3}=0.94 Re^{0.56}N^{-0.12}AR^{0.50}$The average heat transfer coefficients of multiple nozzle impingement on the extended surfaces decreased with increasing fin height and the ratio of fin width to channel width. The effectiveness of ex-tended surfaces ranged from 1.5 to 3.5 depending on the fin height, the ratio of fin width to channel width of pin fin arrays, nozzle number and nozzle area ratio.

• 한국정보통신학회논문지
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• 제18권1호
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• pp.135-141
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• 2014

본 연구에서는 무접합 MuGFET의 핀 폭에 따른 문턱전압의 변화를 줄이기 위한 소자 설계 가이드라인을 제시하였다. 제작된 무접합 MuGFET으로부터 핀 폭이 증가할수록 문턱전압의 변화가 증가하는 것을 알 수 있었다. 무접합 MuGFET의 핀 폭에 따른 문턱전압의 변화를 줄이기 위한 소자 설계가이드라인으로 게이트 유전체, 실리콘박막의 두께, 핀 수를 최적화 하는 연구를 3차원 소자 시뮬레이션을 통해 수행하였다. 고 유전율을 갖는 $La_2O_3$ 유전체를 게이트 절연층으로 사용하거나 실리콘 박막을 최대한 얇게 하므로 핀 폭이 증가해도 문턱전압의 변화율을 줄일 수 있음을 알 수 있었다. 특히 유효 채널 폭을 같게 하면서 핀 수를 많게 하므로 문턱전압 변화율과 문턱전압 아래 기울기를 작게 하는 것이 무접합 MuGFET의 최적의 소자 설계 가이드라인임을 알 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2014년도 추계학술대회
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• pp.749-752
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• 2014

Spacer 유무와 핀 폭, 채널길이에 따른 n채널 MuGFET의 단채널 및 열화 특성을 비교 분석 하였다. 사용된 소자는 핀 수가 10인 Tri-Gate이며 Spacer 유무에 따른 핀 폭이 55nm, 70nm인 4종류이다. 측정한 소자 특성은 DIBL, subthreshold swing, 문턱전압 변화 (이하 단채널 현상)과 소자열화이다. 측정 결과, 단채널 현상은 spacer가 있는 것이 감소하였고, hot carrier degradation은 spacer가 있고 핀 폭이 작은 것이 소자열화가 적었다. 따라서, spacer가 있는 LDD(Lightly Doped Drain) 구조이며 핀 폭이 작은 설계방식이 단채널 현상 및 열화특성에 더욱 바람직하다.

• 산업기술연구
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• 제21권A호
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• pp.33-40
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• 2001

Heat loss from the trapezoidal fins haying different upper side slope and that from a rectangular fin are investigated by the three dimensional analytic method. It is shown that the trapezoidal fins having different upper side slope become an approximate rectangular fin by inst adjusting the slope factor. The comparison of the heat loss between a rectangular fin and an approximate rectangular fin is represented as a function of the non-dimensional fin length, fin width and Biot number to make sure that the analysis on the trapezoidal fins having different upper side slope is countable. One of the results is that the relative value of heat loss between a rectangular fin and an approximate rectangular fin is less than 1.5% for given ranges of non-dimensional length and width in case of Bi = 0.1.

• 설비공학논문집
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• 제28권5호
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• pp.195-201
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• 2016

Enhanced tubes are widely used in air-conditioning and process industries. Structural tubes having three-dimensional roughness are well known to be able to significantly enhance pool boiling heat transfer of refrigerants. In this study, five structural enhanced tubes having different fin density, fin height, and fin gap width were tested using R-134a. Results showed that the heat transfer coefficient was increased with increased fin density. Within test range, the effect of fin height on pool boiling heat transfer coefficient was insignificant. The heat transfer coefficients of the optimum configuration (2047 fpm, 0.21 mm gap width) tube were lower than those of other commercial enhanced tubes. This might be due to the larger fin gap width of the present enhanced tube.

• International Journal of Air-Conditioning and Refrigeration
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• 제9권2호
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• pp.94-101
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• 2001

Fin effectiveness and efficiency of a thermally asymmetric rectangular fin are represented as a function of non-dimensional fin length, width, fip tip surface Biot number and the ratio of fin bottom surface Biot number to top surface Biot number. For this analysis, three dimensional separation of variables method is used. One of the results shows that fin effectiveness can be increased or decreased depending on the fin length as the fin tip surface Biot number increases while fin efficiency decreases without depending on that as the fin tip surface Biot number increases.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.156-163
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• 2008

We proposed a new $p^+/n^+$ gate locally-separated-channel (LSC) bulk FinFET which has vertically formed oxide region in the center of fin body, and device characteristics were optimized and compared with that of normal channel (NC) FinFET. Key device characteristics were investigated by changing length of $n^+$ poly-Si gate ($L_s$), the material filling the trench, and the width and length of the trench at a given gate length ($L_g$). Using 3-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as that of NC device. The LSC device having the trench non-overlapped with the source/drain diffusion region showed excellent $I_{off}$ suitable for sub-50 nm DRAM cell transistors. Design of the LSC devices were performed to get reasonable $L_s/L_g$ and channel fin width ($W_{cfin}$) at given $L_gs$ of 30 nm, 40 nm, and 50 nm.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.