Browse > Article
http://dx.doi.org/10.4313/JKEM.2010.23.9.676

Characteristics Analysis Related with Structure and Size of SONOS Flash Memory Device  

Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University)
Oh, Jae-Sub (Nano Patterning Process Team, National Nanofab Center)
Park, Jeong-Gyu (Department of Electronics Engineering, Chungnam National University)
Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University)
Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University)
Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University)
Choi, Deuk-Sung (Division of Electronics and Information Engineering, Yeungnam College of Science and Technology)
Lee, Hee-Deok (Department of Electronics Engineering, Chungnam National University)
Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.9, 2010 , pp. 676-680 More about this Journal
Abstract
In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.
Keywords
SONOS; Flash memory; P/E speed; Data retention; Endurance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 C. W. Kim, M. K. Kim, and J. W. Lee, Physics and High Technology 13, 2 (2004).
2 S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).   DOI
3 T. Park, S. Choi, D. H. Lee, J. R. Yoo, B. C. Lee, J. Y. Kim, C. G. Lee, K. K. Chi, S. H. Hong, S. J. Hynn, Y. G. Shin, J. N. Han, I. S. Park, U. J. Chung, J. T. Moon, E. Yoon, and J. H. Lee, Symp. VLSI Technol. Dig. Tech. Papers (IEEE, 2003) p. 135
4 F. Dauge, J. Pretet, S. Cristoloveanu, A. Vandooren, L. Mathew, J. Jomaah, and B. -Y. Nguyen, Solid-State Electron. 48, 535 (2004).   DOI
5 M. Mehrotra and B. J. Baliga, IEDM '93 Tech. Dig. (IEEE, Washington DC, USA, 1993) p. 675.
6 L. Chang, Y.-K. Choi, D. Ha, P. Ranade, S. Xiong, J. Bokor, C. Hu, and T. J. King, Proc. IEEE, 91, 1860 (2003).
7 International Technology Roadmap for Semiconductors (ITRS) 2001 Edition, Table 38a, 38b (2001).