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Effects of Device Layout On The Performances of N-channel MuGFET  

Lee, Sung-Min (Department of Electronics Engineering, University of Incheon)
Kim, Jin-Young (Department of Electronics Engineering, University of Incheon)
Yu, Chong-Gun (Department of Electronics Engineering, University of Incheon)
Park, Jong-Tae (Department of Electronics Engineering, University of Incheon)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.49, no.1, 2012 , pp. 8-14 More about this Journal
Abstract
The device performances of n-channel MuGFET with different fin numbers and fin widths but the total effective channel width is constant have been characterized. Two kinds of Pi-gate devices with fin number=16, fin width=55nm, and fin number=14, fin width=80nm have been used in characterization. The threshold voltage, effective electron mobility, threshold voltage roll-off, inverse subthreshold slope, PBTI, hot carrier degradation, and drain breakdown voltage have been characterized. From the measured results, the short channel effects have been reduced for narrow fin width and large fin numbers. PBTI degradation was more significant in devices with large fin number and narrow fin width but hot carrier degradation was similar for both devices. The drain breakdown voltage was higher for devices with narrow fin width and large fin numbers. With considering the short channel effects and device degradation, the devices with narrow fin width and large fin numbers are desirable in the device layout of MuGFETs.
Keywords
MuGFET; multi-finger structure; short channel effects; device degradation; breakdown voltage;
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