• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.26-32
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• 1998

We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.867-872
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• 2016

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.77-83
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• 1994

In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.15-19
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• 2012

Presented herein are the results of the study that was conducted on the electrical characteristics of organic field-effect transistors based on poly(3-hexylthiophene), particularly the thickness and annealing temperature of their active layer is varied. The changes in field-effect mobility and current on/off ratio were explored. It was observed that both increasing annealing temperature from $60^{\circ}C$ to $100^{\circ}C$ and various concentrations influence the trade-off relations between the mobility and current on/off ratio. The surface morphology of the 2-${\mu}m^2$ area with various thicknesses was scanned via atomic-forcemicroscopy(AFM) to verify the relationship between surface morphology, which is related to the thickness of the film, and device performance.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.972-973
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• 2007

Relationships between field effect mobility and grain size on pentacene thin-film transistors with $polyimide/SiO_2$ gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and $30\;{\mu}m$ and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from 0.027 to $0.69\;cm^2/(Vs)$. The field effect mobility tends to increase with increasing the grain size. Precursor type polyimide containing polyamic acid show better mobility of $0.69\;cm^2/(Vs)$ than soluble type polyimide. Bias stress characteristics in air are discussed in the basis of the grain size.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.210-213
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• 2013

실리콘 나노선 전계 효과 트랜지스터(Field Effect Transisor: FET)의 특성을 시뮬레이션을 통해 연구하였다. 일반적인 트랜스컨덕턴스(transconductance) 값을 이용하여 소자의 전계 효과 이동도(field effect mobility)를 추출했고, Y-function 방법을 이용하여 저전계 이동도(low field mobility)와 문턱전압(threshold voltage)를 구했다. 채널길이가 10nm로 매우 짧을 때와 100nm의 일반적인 길이 일 때의 전하 이동도 특성을 비교하여 Si 나노선 FET의 쇼트 채널 효과(short channel effect)를 보았다.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.93-96
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• 1990

The characteristics of an inverted staggered-type hydrogenated amorphous silicon thin film transistor has been analyzed by employing numerical simulation. The field effect mobility and threshold voltage are characterized as a function of density of deep and tail states and lattice temperature. It has been found that the density of deep states plays an important role of determining the threshold voltage, while the field effect mobility are very sensitive to the slope of band tail states. Also, the numerically temperature dependence of field effect mobility and threshold voltage has been in good agreements with the experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.