• 반도체디스플레이기술학회지
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• 제1권1호
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• pp.9-13
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• 2002

A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

• 조명전기설비학회논문지
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• 제21권5호
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• pp.106-111
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• 2007

반도체 공정에서 각 단계별 과정을 거친 후 dechucking시 wafer가 ESC(Electrostatic Chuck)로부터 방전되지 못하고, 잔류되어 있는 극성을 띤 전하(Electric charge)들에 의해 wafer와 ESC사이에 인력이 발생하여 wafer의 sliding, popping 및 wafer broken 등의 문제가 발생한다. 본 논문에서는 wafer와 ESC의 구성을 capacitor를 이용하여 modeling하고, PSpice를 사용하여 chucking system에 의한 wafer의 대전 현상을 모의하고 그 결과를 바탕으로 잔류전하를 방전시키기 위한 여러 가지 방법을 검토하여 최적의 잔류전하 제거 기법을 제시한다. 즉 별도의 전압원을 사용하여 (+)와 (-)를 교번하는 구형파를 인가함과 아울러 일정시간 동안 Plasma내에서 스위칭시킴으로써 ESC나 wafer에 charge되어 있는 극성을 띤 전하들을 중화(Neutralize) 시키도록 하였다. 그리고 이를 실제 하드웨어로 구현하여 실 공정에 적용한 결과를 제시한다.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.71-74
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• 2012

Uniformity of the wafer temperature is one of the important factors in etching process. Plasma, chucking force, backside helium pressure and the surface temperature of ESC(electrostatic chuck) affect the wafer temperature. ESC consists of several layers of structure. Each layer has own thermal resistance and the Si-adhesive layer has highest thermal resistance among them. In this work, the temperature distribution of ESC was analyzed by 3-D FEM with various defects and the thickness deviation of the Si-adhesive layer. The result with Si-adhesive layer with the low center thickness deviation shows modified temperature distribution of ESC surface.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.21-23
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• 2011

Uniformity of plasma etching processes critically depends on the wafer temperature and its distribution. The wafer temperature is affected by plasma, chucking force, He back side pressure and the surface temperature of ESC(electrostatic chuck). In this work, 3D mathematical modeling is used to investigate the influence of the geometry of coolant path and the temperature distribution of the ESC surface. The model that has the coolant path with less change of the cross-sectional area and the curvature shows low standard deviation of the ESC surface temperature distribution than the model with the coolant path of the larger surface area and more geometric change.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.46-50
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• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.49-52
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• 2002

본 연구를 통하여 저온 반도체 공정용 정전퍽(ESC)을 테이프캐스팅 공정에 의하여 스테인레스스틸에 소다붕규산염유리가 도포된 형태로 제작할 수 있음을 입증하였다. 스테인레스스틸 기판위의 유리 도포층은 125 $\mu\textrm{m}$의 두께로 제작되었다. 유리 도포층의 접합력은 매우 우수하여 $300^{\circ}C$이상의 온도변화에서도 균열이나 층간갈라짐 현상이 발생하지 않았다. 정전 고착압력은 전반적으로 이론적 관계인 전압의 제곱에 비례하는 경향을 보였으나, 고온과 고인가전압에서는 이 관계에서 벗어나는 것으로 나타났다. 이러한 이탈현상은 고온과 고인가전압에서 전기비저항의 감소에 따른 누설전류의 증가에 기인한다.

• 한국표면공학회지
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• 제49권6호
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• pp.567-574
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• 2016

We have analyzed chemical properties of polysiloxane and polysilazane films, respectively, as sealing materials for electrostatic chuck (ESC) and have investigated the possibility of polysilazane as an alternative sealant to polysiloxane. It has been revealed that Si-O with organic bonding ($Si-CH_3$) existed in polysiloxane films compared to only pure Si-O bonding in polysilazane films. The sealing property of polysilazane has been found outstanding even in a short time of application. In the polysiloxane films containing $H_2O$, pin holes have been found possibly due to $CO_2$ gas evolution, and low adhesion with Si substrate has been observed after heat stress test in connection with the existence of organic bonding. After acid resistance test in 0.5 vol.% HF, 68 wt.% $HNO_3$, and 37 wt.% HCl solution, polyilazane films have shown a longer survival times. Compared to the conventional polysiloxane sealant, polysilazane is expected as a new sealing material because of good thermal and chemical stability.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.14-20
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• 2023

The electrostatic chuck is a technology that uses electroadhesion to attach objects and is widely used in semiconductor and display processes. This research conducted Maxwell by varying parameters to examine the distribution and variations of chucking force in a bipolar-type ESC. The parameters that were changed include the material properties of the dielectric layer and attachment substrate, applied voltage to the electrode, and the gap and width between the electrodes. The analysis results showed that as the relative permittivity of the dielectric layer and substrate increased, the chucking force also increased, with the relative permittivity of the substrate having a greater impact on the chucking force. And increasing the applied voltage led to an increase in both the chucking force and its rate of change. Lastly, as the gap between the electrodes increased, the chucking force rapidly decreased until a certain distance, after which the decrease became less significant. On the contrary, increasing the electrode width resulted in a rapid increase in the chucking force until a certain width, beyond which the increase became less pronounced, eventually converging to a chucking force of 1700 Pa. This paper is expected to have high potential for the development and research of ESC for OLED deposition.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.169-172
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• 2002

This study demonstrated the feasibility of using tape-casting followed by sintering as a low-cost alternative for coating glass-ceramic or glass film on a metal substrate. The process has been successfully used to fabricate a glass-on-stainless steel and a glass-ceramic-on-molybdenum electrostatic chuck(ESC) with the insulating layer thickness about $150{\mu}{\textrm}{m}$. Electrical resistivity data of the coaling were obtained between room temperature and 55$0^{\circ}C$; although the resistivity values dropped rapidly with increasing temperature in both coatings, the glass-ceramic still retained a high value of $10^{10}$ ohm-cm at $500^{\circ}C$. Clamping pressure measurements were done using a mechanical apparatus equipped with a load-cell at temperatures up to $350^{\circ}C$ and applied voltages up to 600V; the clamping behavior of all ESCs generally followed the voltage-squared curve as predicted by theory. Based on these results, we believe that we have a viable technology for manufacturing ESCs for use in reactive-ion etch systems.