Browse > Article

Effect of the Si-adhesive layer defects on the temperature distribution of electrostatic chuck  

Lee, Ki Seok (Division of Mechanical & Automotive Engineering, Kongju National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.11, no.2, 2012 , pp. 71-74 More about this Journal
Abstract
Uniformity of the wafer temperature is one of the important factors in etching process. Plasma, chucking force, backside helium pressure and the surface temperature of ESC(electrostatic chuck) affect the wafer temperature. ESC consists of several layers of structure. Each layer has own thermal resistance and the Si-adhesive layer has highest thermal resistance among them. In this work, the temperature distribution of ESC was analyzed by 3-D FEM with various defects and the thickness deviation of the Si-adhesive layer. The result with Si-adhesive layer with the low center thickness deviation shows modified temperature distribution of ESC surface.
Keywords
Electrostatic chuck; Temperature distribution; Si-adhesive;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 Kiihanmaki, J. and Franssila, S., " Deep Silicon Etching in inductively Coupled Plasma Reactor for MEMS, " Phisica Scpita., T79, 1999.
2 Tretheway, D. and Aydil, E. S., "Modeling of Heat Transport and Wafer Heaing Effects during Plasma Etching, " J. Electrochem. Soc., Vol. 143, pp.3674- 3680., 1996.   DOI   ScienceOn
3 Samir, T. 2003 Improving Wafer Temperature Uniformity for Etch Applications. A Dissertation in Mechanical Engineering, Texas Tech University.
4 Daviet, J. and Peccoud L., "Heat Transfer in a Microelectronics Plasma Reactor, " J. Appl. Phys., Vol. 73, pp.1471-1479., 1993.   DOI
5 Kelkar, U.M., Gordon, M. H., Roe, L. A. and Li, Y., "Diagnostics and modeling in a pure argon plasma: Energy balance study, " J. Vac. Sci. Technol. A17, pp.125-132., 1999.
6 이기석, "정전척 온도분포 개선을 위한 냉각수 관로 형상," 반도체디스플레이기술학회지, 제 10 권 4 호, pp21-23, 2011.