• Journal of Mechanical Science and Technology
• /
• 제14권2호
• /
• pp.251-258
• /
• 2000

Thermal deformation in an electronic package due to thermal strain mismatch is investigated. The warpage and the in-plane deformation of the package after encapsulation is analyzed using the laminated plate theory. An exact solution for the thermal deformation of an electronic package with circular shape is derived. Theoretical results are presented on the effects of the layer geometries and material properties on the thermal deformation. Several applications of the exact solution to electronic packaging product development are illustrated. The applications include lead on chip package, encapsulated chip on board and chip on substrate.

• Transactions on Electrical and Electronic Materials
• /
• 제16권6호
• /
• pp.351-354
• /
• 2015

In this study, alumina plates 9~25 μm in size were used as thermal fillers, and epoxy resin was used as a polymer matrix. Oriented alumina plate/epoxy composites were prepared using a rolling method. The effect of ordering alumina plates increased with alumina plate size. The thermal conductivity and flexural strength of the composites were investigated. The horizontal thermal conductivity of the oriented composite was significantly higher than the vertical thermal conductivity. The horizontal thermal conductivity of the 75 wt% alumina content was 8.78 W/mk, although the vertical thermal conductivity was 1.04 W/mk. Ordering of the alumina plate using a rolling method significantly improved the thermal conductivity in the horizontal direction. The flexural strengths of the ordered alumina/epoxy composites prepared at different curing temperatures were measured.

• 마이크로전자및패키징학회지
• /
• 제10권3호
• /
• pp.43-55
• /
• 2003

최근 IT산업의 발달과 그에 따른 전자부품기술의 발전이 가속화됨에 따라, 전자부품의 경박 단소화 및 고성능에 대한 요구는 전자패키지 (electronic package) 및 반도체기판(PKG substrate) 업체들로 하여금 고밀도의 입출력(I/O)과 우수한 열적, 전기적 특성을 보유하면서 높은 양산수율로 제품이 가격경쟁력을 갖도록 유도하고 있다. 이러한 경향에 따라 세계적인 반도체 회사(chip-maker)들은 더욱 혹독한 조건의 신뢰성 표준을 마련하여 제반 산업에 전반적인 적용을 요구하고 있으며, 환경친화 및 고주파, 고성능의 특성을 지닌 새로운 소재를 개발하도록 촉구하고 있는 실정이다. 반도체기판은 구성소재에 따라 구현되는 특성의 범위가 매우 크므로 우수한 특성의 소재를 반도체기판에 적용할 때 고객의 요구조건에 충분히 만족시킬 수 있을 것으로 기대된다. 따라서, 기판업계에서는 우수한 특성을 나타내는 원자재의 개발 및 수급이 절실하게 되었으며 급변하는 원자재의 기술 동향에 대한 분석은 향후 전자패키지 및 기판제품의 경쟁력을 향상시킬 수 있을 것이므로 본 연구에서는 최신 반도체기판 원자재의 기술 동향과 원자재의 특성을 분석하고자 하였다.

• 마이크로전자및패키징학회지
• /
• 제28권2호
• /
• pp.13-28
• /
• 2021

트랜지언트 전자소자는 전해질 수용액이나 체내와 같은 거친 환경에서도 작동이 가능하며 동작 이후 가수분해되어 스스로 제거되기 때문에 기존의 전자소자를 대체하여 의료 목적의 체내 삽입 소자 등 다양한 연구 영역에서 활용되고 있다. 또한 물과 효소만으로 제거가 가능한 트랜지언트 전자소자는 최근 대두되고 있는 전자 쓰레기와 환경 오염 문제를 해결할 수 있는 신개념 그린 테크놀로지로 많은 주목을 받고 있다. 하지만, 트랜지언트 전자소자의 작동 환경인 수용액과 체내는 지속적은 물 침투를 통해 소자 내 핵심 부품을 열화시킨다. 이러한 환경 내 안정한 동작을 위하여 수동적 보호 기능을 가진 피막이 소자 외부를 감싸는 봉지막 전략이 도입되었다. 본 논문에서는 트랜지언트 전자소자의 등장 배경과 분해 거동을 포함한 최근 연구 동향과 작동 환경 내 물 침투를 방지하여 동작 신뢰도를 향상시킬 수 있는 봉지막 전략에 관하여 정리하였다.

• 마이크로전자및패키징학회지
• /
• 제21권2호
• /
• pp.1-11
• /
• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• 전자통신동향분석
• /
• 제38권6호
• /
• pp.41-51
• /
• 2023

Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.

• 마이크로전자및패키징학회지
• /
• 제24권1호
• /
• pp.35-43
• /
• 2017

The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC.

• 마이크로전자및패키징학회지
• /
• 제26권3호
• /
• pp.15-22
• /
• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
• /
• pp.193-197
• /
• 2003

As one of the core technologies in the field of the optical communication with WDM, the optical cross connector with movements of micro mirrors is getting important day by day. The packaging structure of 2-dimensional NxN MOEMS switch should be determined by the harmonization of the following items such as the geometrical compatability between optical and structural components, the characteristics of optical input and output parts with device, and the electrical performance for the operation of micro mirrors. Therefore, the packaging process could be defined as the integrated technology completed by the optical and electrical science and the material science for the understanding of its thermo-mechanical properties with packaging materials. In the present study, the harmonization between the optical and structural components as well as the optical characteristics of lens system used will be investigated.

• 마이크로전자및패키징학회지
• /
• 제29권1호
• /
• pp.35-41
• /
• 2022

5G 시대를 맞아, 인공지능, 클라우드 컴퓨팅, 자율주행 차량, 스마트 제조 등의 기술 소요가 증가하고 있다. 전자기기의 고효율을 위해 고집적회로 및 패키징 연구는 중요하다. 전해도금된 솔더는 범프 조성의 균일성에 한계가 있다. 작은 크기의 솔더 파우더로 구성된 솔더 페이스트는 고집적 패키징에 일반적으로 사용되는 솔더 중 하나이다. 솔더 페이스트에 나노 입자를 첨가하거나 기판 표면 마감 처리를 하여 젖음성을 향상시키고, 금속 패드 계면에서 금속간화합물의 성장을 억제하는 연구가 진행중이다. 본 논문은 나노 입자 첨가를 통한 솔더 페이스트의 젖음성 향상과 계면 금속간화합물의 성장을 억제하는 원리에 대하여 설명한다.