• Journal of Mechanical Science and Technology
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• v.14 no.2
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• pp.251-258
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• 2000

Thermal deformation in an electronic package due to thermal strain mismatch is investigated. The warpage and the in-plane deformation of the package after encapsulation is analyzed using the laminated plate theory. An exact solution for the thermal deformation of an electronic package with circular shape is derived. Theoretical results are presented on the effects of the layer geometries and material properties on the thermal deformation. Several applications of the exact solution to electronic packaging product development are illustrated. The applications include lead on chip package, encapsulated chip on board and chip on substrate.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.351-354
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• 2015

In this study, alumina plates 9~25 μm in size were used as thermal fillers, and epoxy resin was used as a polymer matrix. Oriented alumina plate/epoxy composites were prepared using a rolling method. The effect of ordering alumina plates increased with alumina plate size. The thermal conductivity and flexural strength of the composites were investigated. The horizontal thermal conductivity of the oriented composite was significantly higher than the vertical thermal conductivity. The horizontal thermal conductivity of the 75 wt% alumina content was 8.78 W/mk, although the vertical thermal conductivity was 1.04 W/mk. Ordering of the alumina plate using a rolling method significantly improved the thermal conductivity in the horizontal direction. The flexural strengths of the ordered alumina/epoxy composites prepared at different curing temperatures were measured.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.43-55
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• 2003

As the development of If industries and their electronic device manufacturing technology have been accelerated recently, the request for electronic devices with small size, light weight, and high performance has been inducing that electronic package and substrate (PCB) companies have to develop substrates with low cost, high dense I/O, excellent thermal properties and electrical properties. Therefore, world-wide chip makers have been setting their own severe reliability standards and requiring their suppliers to keep specification and to develop green, high frequency and high-performing substrates. Because properties of substrates are dependent mainly on their constituent materials, the application of them showing superior properties is expected to satisfy the customer's requirement. Therefore, substrate companies should ensure the superiority of materials and assure their competitive capability of substrates by analyzing the latest trends of technology and properties of the materials.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.13-28
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• 2021

Since transient electronic devices can operate under harsh conditions such as electrolytic solutions or inside the body, and be removed by hydrolysis after operation, they can replace conventional electronic devices in various research areas like biomedical implantable devices. Moreover, transient electronic devices that can dissolve in water and enzymes are the focus of the new concept of green technology, which can solve electrical waste issues. However, the surroundings of transient electronic devices can deteriorate internal device components. Thus, an encapsulation strategy is introduced for stable operation in solution by shielding the outside of a device with a passive barrier. This article summarizes recent research trends in transient electronic devices, including their background, dissolution behavior, and encapsulation strategies to enhance reliability by blocking water permeation.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• Electronics and Telecommunications Trends
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• v.38 no.6
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• pp.41-51
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• 2023

Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.35-43
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• 2017

The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.193-197
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• 2003

As one of the core technologies in the field of the optical communication with WDM, the optical cross connector with movements of micro mirrors is getting important day by day. The packaging structure of 2-dimensional NxN MOEMS switch should be determined by the harmonization of the following items such as the geometrical compatability between optical and structural components, the characteristics of optical input and output parts with device, and the electrical performance for the operation of micro mirrors. Therefore, the packaging process could be defined as the integrated technology completed by the optical and electrical science and the material science for the understanding of its thermo-mechanical properties with packaging materials. In the present study, the harmonization between the optical and structural components as well as the optical characteristics of lens system used will be investigated.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.35-41
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• 2022

In the era of Fifth-Generation (5G), technology requirements such as Artificial Intelligence (AI), Cloud computing, automatic vehicles, and smart manufacturing are increasing. For high efficiency of electronic devices, research on high-intensity circuits and packaging for miniaturized electronic components is important. A solder paste which consists of small solder powders is one of common solder for high density packaging, whereas an electroplated solder has limitation of uniformity of bump composition. Researches are underway to improve wettability through the addition of nanoparticles into a solder paste or the surface finish of a substrate, and to suppress the formation of IMC growth at the metal pad interface. This paper describes the principles of improving the wettability of solder paste and suppressing interfacial IMC growth by addition of nanoparticles.