• Journal of Information Technology Services
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• v.8 no.2
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• pp.147-156
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• 2009

As the result of the rapid development of IT technology, an on-line diagnostic system using the field bus communication network coupled with a smart sensor module will be widely used at the nuclear power plant in the near future. The smart sensor system is very useful for the prompt understanding of abnormal state of the key equipments installed in the nuclear power plant. In this paper, it is assumed that a smart sensor system based on the fieldbus communication network for the surveillance and diagnostics of safety-critical equipments will be installed in the harsh-environment of the nuclear power plant. It means that the key components of fieldbus communication system including microprocessor, FPGA, and ASIC devices, are to be installed in the RPV (reactor pressure vessel) and the RCS (reactor coolant system) area, which is the area of a high dose-rate gamma irradiation fields. Gamma radiation constraints for the DBA (design basis accident) qualification of the RTD sensor installed in the harsh environment of nuclear power plant, are typically on the order of 4 kGy/h. In order to use a field bus communication network as an ad-hoc diagnostics sensor network in the vicinity of the RCS pump area of the nuclear power plant, the robust survivability of IT-based micro-electronic components in such intense gamma-radiation fields therefore should be verified. An intelligent CCD camera system, which are composed of advanced micro-electronics devices based on IT technology, have been gamma irradiated at the dose rate of about 4.2kGy/h during an hour UP to a total dose of 4kGy. The degradation performance of the gamma irradiated CCD camera system is explained.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.136-144
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• 2004

From the AC analysis results utilizing a two dimensional device simulator, the ac equivalent-circuit modeling of the ESD protection devices is executed. It is explained that the ac equivalent circuit of the NMOS protection transistor is modeled by a rather complicated form and that, depending on the frequency range, the error can be large if it is modeled by a simple RC serial circuit. It is also shown that the ac equivalent circuit of the thyristor-type pnpn protection device can be modeled by a simple RC serial circuit. Based on the circuit simulations utilizing the extracted equivalent circuits, the effects of the parasitics in the protection device on the characteristics of LNA are examined when the LNA, which is one of the important RF circuits, is equipped with the protection device. It is explained that a large error can result in estimating the circuit characteristics if the NMOS protection transistor is modeled by a simple capacitor. It is also confirmed that the degradation of the LNA characteristics by incorporating the ESD protection device can be reduced a lot by adopting the suggested pnpn device.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.15-24
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• 2014

Recently, a variety of printing technologies, including ink jet, gravure, and roll-to-roll (R2R) printing, has generated intensive interest in the application of flexible and wearable electronic devices. However, the actual use of printing technique is much limited because the sintering process of the printed nanoparticle inks remains as a huge practical drawback. In the fabrication of the conductive metal film, a post-sintering process is required to achieve high conductivity of the printed film. The conventional thermal sintering takes considerable sintering times, and requires high temperatures. For application to flexible devices, the sintering temperature should be as low as possible to minimize the damage of polymer substrate. Several alternative sintering methods were suggested, such as laser, halogen lamp, infrared, plasma, ohmic, microwave, and etc. Eventually, the new sintering technique should be applicable to large area, R2R, and polymer substrate as well as low cost. This article reviews progress in recent technologies for several sintering methods. The advantages and disadvantages of each technology will be reviewed. Several issues for the application in R2R process are discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.699-701
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• 2011

The Next-generation IT technology has been evolving from single technique to another which has merged, converging characteristics. The government categorized the 5 essential technologies to secure competitiveness in designing system semiconductors as smart motor vehicle info-tainment platform, smart TV multimedia system, smart phone analog interface technique, smart convergence digital communication and RF techniques, and advanced power management for smart devices. Also, it designated smart phone, smart TV, smart motor vehicle, and smart pad as the key industries. Such core techniques will become the key technologies of semiconductor design to secure the competitiveness of the next generation smart devices and the techniques can be transferred to fab-less design companies. In this contribution, we analyze the issues and the problems of the SoC design trends for smart motor vehicle info-tainment platforms.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.668-670
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• 2011

The Next-generation IT technology has been evolving from single technique to another which has merged, converging characteristics. The government categorized the 5 essential technologies to secure competitiveness in designing system semiconductors as smart motor vehicle info-tainment platform, smart TV multimedia system, smart phone analog interface technique, smart convergence digital communication and RF techniques, and advanced power management for smart devices. Also, it designated smart phone, smart TV, smart motor vehicle, and smart pad as the key industries. Such core techniques will become the key technologies of semiconductor design to secure the competitiveness of the next generation smart devices and the techniques can be transferred to fab-less design companies. In this contribution, we analyze the issues and the problems of the smart phone analog and interface techniques.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.27-32
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• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• Journal of Broadcast Engineering
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• v.17 no.6
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• pp.1014-1028
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• 2012

Recently, N-screen service and secondary device have gotten an attention from public. Also, we can experience N-screen service through various digital devices. N-screen means multimedia technology which can seamlessly consume multimedia content. Secondary device means auxiliary multimedia device which can consume content related to main content through adjunct connection to main device. Not only be electronic manufactures interested in N-screen technology and services but also digital devices applied for N-screen have been released. But it has limitation that user can only consume content to be purchased from content company server not device of user. This paper proposes the system that composes effective and various N-screen multimedia service through MPEG-4 LASeR (Lightweight Application Scene Representation) PMSI (Presentation and Modification of Structured Information) as international standard technology which can provide scene description including many instruction for dynamic update of scene.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.10
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• pp.1011-1019
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• 2015

Insulated-gate bipolar transistors (IGBTs) are the predominantly used power semiconductors for high-current applications, and are used in trains, airplanes, electrical, and hybrid vehicles. IGBT power modules generate a considerable amount of heat from the dissipation of electric power. This heat generation causes several reliability problems and deteriorates the performances of the IGBT devices. Therefore, thermal management is critical for IGBT modules. In particular, realizing a proper thermal design for which the device temperature does not exceed a specified limit has been a key factor in developing IGBT modules. In this study, we investigate the thermal behavior of the 1200 A, 3.3 kV IGBT module package using finite-element numerical simulation. In order to minimize the temperature of IGBT devices, we analyze the effects of various packaging materials and different thickness values on the thermal characteristics of IGBT modules, and we also perform a design-of-experiment (DOE) optimization

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.99-104
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• 2013

Recently smart devices which combine traditional electronic devices and personal computers, such as smart phones and smart TV, have caught people's eyes from all over the world. A multi-media SoC platform which embeds not only a calculating processor but also an operating system could provide an user-customized environment of several types of communication methods to PC or Internet. In this paper, we describe a multi-functioning SoC platform with video, audio and other communicating protocols based on Core-A processor and AMBA buses. To verify the designed multi-media SoC platform, JPEG decoding and ADPCM encoding/decoding algorithms are applied on it and the final decoding results are confirmed by video monitors and audio speakers.