• Proceedings of the KSR Conference
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• 한국철도학회 2008년도 춘계학술대회 논문집
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• pp.512-518
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• 2008

The importance of modern electronic devices is gradually increased and, the requirement of the safe and reliable earthing and bonding for protection of the electronic devices is consequently absolute. The electrical continuity and physical strength of the bonding work in rail signal and impedance bonding is also one of the important issues. The thermit welding for earth cable connection and rail bonding work proposed hereunder is an effectively applicable in many fields of rail industries.

• Proceedings of the KIEE Conference
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• 대한전기학회 1993년도 하계학술대회 논문집 A
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• pp.501-503
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• 1993

A circuit of sigmoid function for neural network is designed by using Piecewise Linear (PWL) method. The slope of sigmoid function can be adjusted to 2 and 0.25. Also the circuit presents both sigmoid function and its differential form. The circuits is simulated by using ViewLogic. Theoretical and simulated performance agree with 1.8 percent.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2000년도 추계학술발표대회 및 bio-venture fair
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• pp.123-126
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• 2000

Bio-electronics has been considered as one of the most appropriate candidates to overcome the frequently encountered problems in the development of future electronic devices. It has some advantages such as ultra fast electron transfer rate and high-energy efficiency compared with the silicon-based electronic devices. In silicon-based electronics, there are some of limitations of manufacturing process and physical problems. Bio-electronics can overcome the limitation and problem of silicon-based electronics. Bio-electronics has possible application areas as biosensor, biochip, bio-transistor and bio-computer. In the future, bio-electronics can substitute the silicon-based electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제30권4호
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• pp.229-234
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• 2017

In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

• Vacuum Magazine
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• 제2권2호
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• pp.4-11
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• 2015

During last two decades, remarkable progresses have been made in organic electronic devices, such as organic light-emitting device, organic photovoltaic and many other applied devices. Many of these progress are attributed to the multilayered/heterojunction device architectures, which could be achieved from the control of "interfacial energetics". In that sense, the interfacial electronic structures in organic electronic devices have a decisive role in device performance. However, the prediction of the interfacial electronic structures from each separate material is not trivial. Many complex phenomena occur at the interface and these can be only understood from thorough measurements on interfacial electronic structures in situ. Photoemission and inverse photoemission spectroscopy have been known as the most proper measurement tools to analyze these interfacial electronic structures. In this review, the basic principles of (inverse) photoemission spectroscopy and typical measurement results on organic/inorganic interfaces are introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제37권6호
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• pp.649-656
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• 2024

Memristors, as next-generation memory devices, have garnered significant academic interest. Among them, TiO₂/TiO_2-x based memristors have particularly attracted substantial scholarly attention. Research on the activation and stability of TiO₂ based memristor devices through process parameters is essential. Here, to determine the impact of process parameters on the activation of TiO₂/TiO_2-x based memristor devices, we fabricated the memristor devices using a sputtering system and conducted annealing at 400℃. Additionally, to analyze the electrical characteristics of the devices, we measured the I-V curves and C-V curves. Also, we examined TiO₂/TiO_2-x based memristor devices surface using SEM. Consequently, it was observed that the devices subjected to annealing exhibited improved hysteresis curves in the I-V characteristics, a reduced bandgap, and changes in resistance compared to the non-annealed devices. The retention test results further demonstrated that the set/reset characteristics of the devices were stable, confirming their potential applicability as memory devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.181-181
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• 2009

전자부품용 Pb-free sealing frit의 열팽창계수를 기판에 matching 시키기 위하여 음의 열팽창계수를 가지고 있는 $\beta$-Eucryptite, $\beta$-Spodumene를 합성하여 filler로 첨가하였다. 합성된 filler는 저온소성용 유리프리트의 높은 열팽창계수를 조절하기 용이하고, 유리프리트와 복합화 하여 소성하면 낮은 열팽창계수로 인한 우수한 열충격 저항성을 갖는다. Filler로써 $\beta$-Eucryptite, $\beta$-Spodumene의 결정성을 향상시키기 위해 $1250^{\circ}C$에서 5 시간 동안 유지하는 합성공정을 3회 반복 진행한 후 XRD를 사용하여 결정성을 분석하였고, TMA를 이용하여 filler 첨가량에 따른 유리프리트의 열팽장계수의 변화를 측정하였다. 또한, filler 입도와 함량에 따른 melting 특성을 분석하기 위해 Pill test를 진행하였으며, soda-lime glass 기판과의 접합면을 SEM을 사용하여 관찰하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.2295-2297
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• 2003

The major problem encountered in satellite design is EMI (Electro-Magnetic Interference) and EMC (Electro-Magnetic Compatibility). Here, our focus is on the effects of protons on the electronic system. The SEU (Single Event Upset) results from the level change of stored information due to photon radiation and temperature in the space and the nuclear power plant environment. The impact of SEU on PLD (Programmable Logic Devices) technology is most apparent in ROM/SRAM/DRAM devices wherein the state of storage cell can be upset. In this paper, a simple and powerful test techniques is suggested, and the results are presented for the analysis and future reference. The test results are compared with that of JPL test report. In our experiment, the proton radiation facility available at KIRAMS (Korea Institute of Radiological Medical Sciences) has been applied on a commercially available SRAM manufactured by Hynix Semiconductor Company.

• Journal of the Institute of Electronics Engineers of Korea SC
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• 제43권5호
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• pp.60-67
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• 2006

Thermal analysis and prediction of electronic components is required to predict and optimize the reliability of onboard electronic unit employed in space vehicles. This paper introduces a methodology on thermal prediction that uses isothermal PCB model, thermal force model, thermal resistance matrix and superposition principle to calculate electronic devices temperatures undergoing thermal conduction environment. An example is Presented including a prediction result by this method and simulation results performed by commercial program.