Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.166-166
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- 2010
Manufacture and characteristic evaluation of Amorphous Indium-Gallium-Zinc-Oxide (IGZO) Thin Film Transistors
- Seong, Sang-Yun (Department of Electronic Materials Science and Engineering Kyungpook National University) ;
- Han, Eon-Bin (Department of Electronic Materials Science and Engineering Kyungpook National University) ;
- Kim, Se-Yun (Department of Electronic Materials Science and Engineering Kyungpook National University) ;
- Jo, Gwang-Min (Department of Electronic Materials Science and Engineering Kyungpook National University) ;
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Kim, Jeong-Ju
(Department of Electronic Materials Science and Engineering Kyungpook National University) ;
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Lee, Jun-Hyeong
(Department of Electronic Materials Science and Engineering Kyungpook National University) ;
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Heo, Yeong-U
(Department of Electronic Materials Science and Engineering Kyungpook National University)
- Published : 2010.08.18
Abstract
Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature.
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