• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.70-73
• /
• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• 한국세라믹학회지
• /
• 제44권4호
• /
• pp.214-218
• /
• 2007

The decrease of polarization resistance in cathode is the key point for operating at intermediate temperature SOFC (solid oxide fuel cell). In this study, the influence of Co substitution in B-site at complex perovskite on the electronic conductivity of PSCM ($Pr_{0.3}Sr_{0.7}Co_xMn_{(1-x)}$) was investigated. The PSCM series exhibits excellent MIEC (mixed ionic electronic conductor) properties. The ASR (area specific resistance) of PSCM3773 was $0.174{\Omega}{\cdot}cm^2\;at\;700^{\circ}C$. The activation energy of PSCM3773 was also lower than other compositions of PSCM. The TEC(thermal expansion coefficient) was decreased by addition of Mn. The ASR values were increased gradually during the thermal cycling test of PSCM37773 due to the delamination between electrolyte and cathode materials. The delamination was caused by the difference of TEC.

• 한국전기전자재료학회논문지
• /
• 제18권2호
• /
• pp.120-124
• /
• 2005

In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.227-227
• /
• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. The as-deposited films are annealed in Rapid Thermal Annealing (RTA) system in various atmosphere(Air, Vacuum and $N_2$) at $500^{\circ}C$. In this work, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) of chemical bath deposited (CBD) CdS films on glass is carried out. In case of the annealed CdS films in $N_2$, grain size was larger than as-annealed films.

• 한국전기전자재료학회논문지
• /
• 제24권9호
• /
• pp.766-772
• /
• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.348-349
• /
• 2006

$LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ cathode material was synthesized by a mixed hydroxide methode. The surface of the $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ was coated with a carbon by using a sol-gel method to improve further its electrochemical properties. Electrochemical studies were performed by assembling 2032 coin cells with lithium metal as an anode. OSC (differential scanning calorimetry) data showed that exothermic reactions of charged to 4.3V vs. Li was suppressed in the carbon-coated materials. The carbon-coated $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ showed the improved rate capability and thermal stability.

• 폴리머
• /
• 제25권2호
• /
• pp.254-262
• /
• 2001

전자재료 및 복합재료의 매질 등에 널리 사용되고 있는 에폭시 수지중 N, N'-diglycidylaniline에 폴리이미드의 전구체로서 poly(amic acid) (PAA)를 도입하여 에폭시의 물성을 향상시키기 위해, PAA의 함량과 이미드화 정도를 조절하여 상호 침투형 고분자 형식 (IPN's)으로 중합하였다. FT-IR과 고유점도 측정으로 반응을 확인하였으며 TGA, DSC, TMA, UTM, SEM을 사용하여 열적, 기계적 특성 및 표면구조를 측정하였다. 그 결과 PAA함량의 증가에 따라 내열성의 향상과 유리진이온도의 감소 및 열팽창계수의 감소를 나타내었으며, PAA첨가후 에폭시의 기계적 특성이 향상되었다. 내충격성은 PAA 함량에 따라 920∼2412J/m의 값을 나타내었고 PAA 분절들이 에폭시 네트워크에서의 강인화제로서 내충격성을 향상시킴을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.136-139
• /
• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• Nuclear Engineering and Technology
• /
• 제55권7호
• /
• pp.2556-2566
• /
• 2023

A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U_1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC_1-x, Zr_xU_1-xC, Mo_xU_1-xC, and Rh_xU_1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (α_V) and heat capacity (C_p) of UC predicted by the quasi harmonic approximation (QHA) method.

• Nuclear Engineering and Technology
• /
• 제41권1호
• /
• pp.39-52
• /
• 2009

Theory-based models and high performance simulations are briefly reviewed starting with atomistic methods, such as Electronic Structure calculations, Molecular Dynamics, and Monte Carlo, continuing with meso-scale methods, such as Dislocation Dynamics and Phase Field, and ending with continuum methods that include Finite Element and Finite Volume. Special attention is paid to relating thermo-mechanical and chemical properties of the fuel to reactor parameters. By inserting atomistic models of point defects into continuum thermo-chemical calculations, a model of oxygen diffusivity in $UO_{2+x}$ is developed and used to predict point defect concentrations, oxygen diffusivity, and fuel stoichiometry at various temperatures and oxygen pressures. The simulations of coupled heat transfer and species diffusion demonstrate that including the dependence of thermal conductivity and density on composition can lead to changes in the calculated centerline temperature and thermal expansion displacements that exceed 5%. A review of advanced nuclear fuel performance codes reveals that the many codes are too dedicated to specific fuel forms and make excessive use of empirical correlations in describing properties of materials. The paper ends with a review of international collaborations and a list of lessons learned that includes the importance of education in creating a large pool of experts to cover all necessary theoretical, experimental, and computational tasks.