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http://dx.doi.org/10.4313/JKEM.2005.18.2.120

Characteristics of Mo Gate Electrode Deposited on ZrO2 Gate Insulator  

Kang, Young-Sub (한국항공대학교 항공전자공학과)
An, Jea-Hong (한국항공대학교 항공전자공학과)
Kim, Jae-Young (한국항공대학교 항공전자공학과)
Hong, Shin-Nam (한국항공대학교 항공전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.2, 2005 , pp. 120-124 More about this Journal
Abstract
In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.
Keywords
Metal gate; High-k; Mo; ZrO$_2$;
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