Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.70-73
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- 2001
Fabrications and properties of MFIS capacitor using SiON buffer layer
SiON buffer layer를 이용한 MFIS Capacitor의 제작 및 특성
Abstract
MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O
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