Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The effect of rapid thermal annealing treatment for ferroelectric properties of PZT thin films

RTA를 이용한 후열처리가 PZT 박막의 강유전 특성에 미치는 영향

  • 주필연 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 박영 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 정규원 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 임동건 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 송준태 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 1999.11.01
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Abstract

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

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