• The Journal of Korean Academy of Orthopedic Manual Physical Therapy
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• v.22 no.2
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• pp.65-69
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• 2016

Background: The purpose of this study was to determine whether place running exercise that combines thoracic mobility exercise program increases pulmonary function of the 20s subjects. Method: Thirty subjects in their 20s were randomly assigned to on experimental group (n=15) or control group (n=15). Over the course of four weeks, the experimental group participated in place running exercise that combines thoracic mobility exercise program for 30 minutes three times per week and the control group participated in place running exercise and thoracoabdominal stretching exercise for 30 minutes three times per week. Subjects were assessed pre-test and post-test by measurement of pulmonary function Results: Our findings show that the experimental group had significant difference in expiratory reserve volume and vital capacity and maximal voluntary capacity (p<.05). In the comparison of the two groups, the experimental group had higher vital capacity and maximal voluntary capacity than the control group. Conclusion: In this study, the experimental group showed greater improvement in pulmonary function than the control group, which indicates that the place running exercise that combines thoracic mobility exercise program exercise is effective at increasing the pulmonary function.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.7-8
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.81-84
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• 2004

Required characteristics of poly-Si TFT's are investigated for the implementation of analog circuits to be integrated on System-on-Glass (SoG). Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT's are derived as a function of the resolution of display system. Effective mobility of poly-Si TFT's required for the realization of source driver is analyzed for various panel sizes.

• Journal of Information Display
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• v.5 no.4
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• pp.1-6
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• 2004

In this paper, we investigate on the characteristics of poly-Si TFTs reuired for the implementation of analog circuits to be integrated with System-on-Glass (SoG). Matching requirements in terms of resistor values, threshold voltage and mobility of poly-Si TFTs are derived as a function of the resolution of display system. Effective mobility of poly-Si TFTs required for the realization of source driver is analyzed for various panel sizes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.9-16
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• 2005

The mobility in strained Si inversion layer on $Si_{1-x}Ge_x$ is calculated considering a quantum effect(subband energy and wavefunction) in inversion layer and relaxation time approximation. The quantum effect in inversion layer is obtained by using self-consistent calculation of $Schr\ddot{o}dinger$ and Poisson equations. For the relaxation time, intravalley and intervalley scatterings are considered. The result shows that the reason for the enhancement in mobility as Ge mole fraction increases is that the electron mobility in 2-폴드 valleys is about 3 times higher than that of 4-폴드 valleys and most electrons are located in 2-폴드 valleys as Ge mole fraction increases. Meanwhile, for the phonon-limited mobility the fitting to experimental data, Coulomb and surface roughness mobilities are included in total mobility, Deformation potentials are selected for the calculated effective field, temperature, and Ge mole fraction dependent mobilities to be fitted to experimental data, and then upgraded data can be obtained by considering nonparabolicity in Si band structure.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.4
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• pp.81-93
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• 2012

We propose efficient mobility management schemes based on pointer forwarding for Proxy Mobile IPv6 Networks(PMIPv6) with the objective to reduce the overall network traffic incurred by mobility management and packet delivery. The proposed schemes are per-user-based, i.e., the optimal threshold of the forwarding chain length that minimizes the overall network traffic is dynamically determined for each individual mobile user, based on the user's specific mobility and service patterns. We demonstrate that there exists an optimal threshold of the forwarding chain length, given a set of parameters characterizing the specific mobility and service patterns of a mobile user. We also demonstrate that our schemes yield significantly better performance than schemes that apply a static threshold to all mobile users. A comparative analysis shows that our pointer forwarding schemes outperform routing-based mobility management protocols for PMIPv6.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.201-210
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• 2012

Now, there are many mobile nodes are efficient and stable when they move to operate with variety techniques have emerged.Recently, there is a growing interest about PMIPv6(Proxy Mobile IPv6) and, in this proposal of essay is the based on the way to mobility support system will stand on the basis from PMIPv6 network to NEMO(Network Mobility). PMIPv6 is mobility support system from single domain, it actual network is composed with nested in a multiple domain structural system. The proposed technique in the domain of two or more, the LMA(Local Mobility Anchor) communication between LMA(Local Mobility Anchor) and MAG(Mobile Access Gateway) of movable domain can increase performance by handover delay and signaling.

• Physical Therapy Korea
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• v.26 no.3
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• pp.42-56
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• 2019

Background: Individuals with mechanical neck pain show biomechanical and neurophysiological changes, including cervical spine muscle weakness. As a result of deep muscle weakness, it causes stability disability and reduced upper thoracic spine mobility, which finally leads to functional movement restriction such as limited range of motion and dysfunction. Recent studies have shown that thoracic spine manipulation and mobilization could reduce symptoms of mechanical neck pain in patients. Objects: The purpose of this study was to investigate the effects of thoracic mobility exercise on cervicothoracic function, posture feature, and pain intensity in individuals with mechanical neck pain. Methods: The study subjects were 26 persons who were randomly assigned to the experimental (with thoracic mobility exercise) and control groups (without thoracic mobility exercise), with 13 subjects in each group. The cervicothoracic function (neck functional disability level and cervicothoracic range of motion), posture feature, and pain rating (using a quadrupled visual analogue scale [QVAS]) were measured before, after 3 weeks, and after 6 weeks. Results: Statistically significant group-by-time interactions were found with repeated analyses of variance for the Korean neck disability index (KNDI), all cervical range of motion (CROM), all thoracic range of motion (TROM), cranial rotation angle, sagittal shoulder posture (SSP), and QVAS (p<.05). All groups showed significant improvements from all times in all the evaluated methods. The KNDI, CROM, TROM of left rotation, and SSP in the experimental group showed significant improvements after 3 weeks, and the TROM of the right rotation and QVAS in the experimental group showed significant improvements after 6 weeks when compared with the control group. Conclusion: Thoracic mobility exercise during 6 weeks might be effective intervention to improve the functional level, posture feature, and QVAS pain rating for managing individuals with mechanical neck pain.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.4
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• pp.211-221
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• 2012

The development of wireless sensor networks (WSNs) is progressed slowly due to limited resources, but it is in progress to the development of the latest IP-based IP-WSN by the development of hardware and power management technology. IPv6 over Low power WPAN (6LoWPAN) is capable of IPv6-built low-power devices. In these IP-based WSNs, existing IP-based techniques which was impossible in WSNs becomes possible. 6LoWPAN is based on the IEEE 802.15.4 sensor networks and is a IPv6-supported technology. Host-based mobility management scheme in IP-WSNs are not suitable due to the additional signaling, network-based mobility management scheme is more suitable. In this paper, we propose an enhanced PMIPv6-based route optimization scheme which consider multi-6LoWPAN network environments. All SLMA (Sensor Local Mobility Anchor) of the 6LoWPAN domain are connected with the SPIG (Sensor Proxy Internetworking Gateway) and performs distributed mobility control for the 6LoWPAN-based inter-domain operations. All information of SLMA in 6LoWPAN domain is maintained by SMAG (Sensor Mobile Access Gateway), and then is performed the route optimization quickly. The status information of the route optimization from SPIG is stored to SLMA and it is supported without additional signaling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.