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Electron Mobility Model in Strained Si Inversion Layer  

Park Il-Soo (Department of Electrical Engineering, Inha University)
Won Taeyoung (Department of Electrical Engineering, Inha University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.3, 2005 , pp. 9-16 More about this Journal
Abstract
The mobility in strained Si inversion layer on $Si_{1-x}Ge_x$ is calculated considering a quantum effect(subband energy and wavefunction) in inversion layer and relaxation time approximation. The quantum effect in inversion layer is obtained by using self-consistent calculation of $Schr\ddot{o}dinger$ and Poisson equations. For the relaxation time, intravalley and intervalley scatterings are considered. The result shows that the reason for the enhancement in mobility as Ge mole fraction increases is that the electron mobility in 2-폴드 valleys is about 3 times higher than that of 4-폴드 valleys and most electrons are located in 2-폴드 valleys as Ge mole fraction increases. Meanwhile, for the phonon-limited mobility the fitting to experimental data, Coulomb and surface roughness mobilities are included in total mobility, Deformation potentials are selected for the calculated effective field, temperature, and Ge mole fraction dependent mobilities to be fitted to experimental data, and then upgraded data can be obtained by considering nonparabolicity in Si band structure.
Keywords
mobility; strain; inversion layer; self-consistent calculation;
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