• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.52.2-52.2
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• 2011

Flat form technology for constructing anticancer loaded multi-walled carbon nanotubes (mwCNTs) was introduced in this study. Conventional anticancer drugs, such as MTX (Methotrexate), cisplatin, DOX (Doxorubicin hydrochloride), DAU (Daunorubicin) and EPI (epirubicin) were bio-conjugated with folic acid (FA) for selective targeting tumor cells. Loading efficiencies of the used anticancer drugs on mwCNTs have shown different order of bindings depending on the molecular bind affinity of NH (amine) formation on mwCNTs. MTT assays have shown increased selective target efficiency of FA conjugated mwCNTs on breast cancer cell growth inhibition. All results collectively indicated promising application of mwCNTs as a smart inorganic nanomaterial for selective targeting drug delivery vehicle at tumor tissues.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.387-390
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• 1998

In this paper, HBT's with lower phase noise and passive elements, such as resistors, capacitors and inductors, for resonance and impedance matching networks are designed, fabricated, tested, and carefully analysed, respectively, and then, they are integrated for the design and fabrication of functional X-band oscillators with lower phase noise. Epi-wafers for HBT's with the structure of graded $Al_{x}$G $a_{1-x}$ As emitter and C-doped base layer of 700.angs. thick were used to specially emphasize the improvement of $f_{T}$ and $f_{max}$, and the lowering of phase noise, in design aspects. At the test frequencies of 12GHz, capacitances of MIM capacitors, spiral inductor, and resistances are 0.5~10pF, 0.4~11.06nH, and 20~1,380.ohm., respectively. The emitter size of HBY's for the X-band MMIC oscillators is 3*10u $m^{2}$, and find chip size is 0.9*0.9m $m^{2}$..EX>.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.79-86
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• 1994

Gain-guided broad-area single quantum well separate confinement heterostructure diode lasers have been fabricated from structures grown by metal organic vapor phase epitaxy. The active layer of the epi-structure is InGaAs emitting 962-965nm and the guiding layer GaAs. The channel width is fixed to 150${\mu}$m and the cavity length varys within the range of 300~800${\mu}$m. For uncoated LD's, the output power of 0.7W has been obtaained at a pulsed current level of 2A, which results about 60% external quantum efficiency. The threshold current density is 200A/cm$^{2}$ for the cavity lengths of 800.mu.m LD's. The stain effect upon the transparent current density has been observed. The internal quantum efficiency is expected to be 88% and the internal loss to be 18$cm^{-1}$. The beam divergence has been measured to be 7$^{\circ}$to lateral and 40$^{\circ}$to transverse direction. finally, 1.2W continuous-wave output power has been obtained at a current level of 2A for AR/HR coated LD's die-bonded on Cu heat-sink and cooled by TEC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.23-28
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• 2006

In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.883-888
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• 2007

Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Proceedings of the Korean Society for Bioinformatics Conference
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• 2004.11a
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• pp.57-63
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• 2004

본 연구에서는 3차원 심근조직에서의 회귀성파동에 대한 수치적 해석결과를 제시한다. 심근 조직에서의 회귀성파동은 심실세동(ventricular fibrillation)의 원인으로 지목되고 있으며 심근세포 이온채널 또는 전기전도시스템 등과 같은 여러 가지 요소들이 관련된 복합적 현상으로 생각되고 있다. 지금까지 이에 관한 많은 연구가 전기생리학적 모델을 이용하여 이루어진바 있으며, 주로 동물 심근세포모델에 기반으로 균일한 2차원 또는 3차원 모델에서의 전기전도 현상 해석을 한 바 있다. 그러나 실제 심장조직의 경우, 두께를 가진 3차원적 형상을 지니고 있으며 층을 따라서 전기생리학적으로 상이한 특성을 가진 세포들로 구성된다. 즉 심근은 층을 가로질러 Epi-cardiac, mid-cardiac, endo-cardiac cell들로 구성되며 각기 다른 APD(action potential duration)을 가지고 있다. 따라서 본 연구에서는 이러한 세가지 종류의 인체 심근세포모델을 사용한 3차원 심근조직에서의 활동전위 전도현상에 대한 결과를 제시한다. 이를 위하여 기존의 인체 3가지 종류의 심근세포 모델을 구현하여 그 타당성을 검토한다. 그리고 이를 바탕으로 3차원 조직모델을 구현하는데, simplified bidomain방법을 사용하였다. 3차원 공간상에서 심근세포에 의한 활동전위 전달현상을 해석하기 위하여 유한요소법을 도입한다. 최종적으로는 3가지의 심근세포층을 가진 3차원 심근조직을 구성하고, 여기에 회귀성 파동을 유도한다. 그리고 단일층으로 이루어진 3차원조직에서의 결과와 비교 분석하여 다세포층에 의한 불균일 효과를 분석하였다.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.112-112
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• 2001

Purpose： We developed the software for diffusion tensor imaging and evaluated its feasibility in norm brains. Method： Five normal volunteers, aged from 25 to 29 years, were examined on a 1.5 T MR system. the diffusion tensor pulse sequence used a SE-EPI with 6 diffusion gradie directions of (1, 1, 0), (-1, 1,0), (1, 0, 1), (-1, 0, 1), (0, 1, 1), (0, 1, -1) and also with no diffusion gradient. A b-factor of 500 sec/mm2 was used. Measurement parameter were as follows； TR/TE=10000 ms/99 ms, FOV=240 mm, matrix=128$\times$128, slice thickness/gap=6 mm/0 mm, bandwidth=91 kHz and the number of total slices=20. Four repeated axial diffusion images were averaged for diffusion tensor imaging. A total scan 11 of 4 min 30 sec was used. Six full diffusion tensor components of Dxx, Dyy, Dzz, Dxy, Dxz and Dyz were obtained using two-point linear regression model from 7 diffusion-weight images at each pixel and fractional anisotropy and lattice index images was estimated fr their eigenvectors and eigenvalues. Our program was written on a platform of IDL. W evaluated the qualities of fractional anisotropy and lattice index images of normal brains a knew whether our software for diffusion tensor imaging may be feasible.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.10-11
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• 2000

광통신을 이용한 근거리 전송과 장거리 전송에서 1.3 및 1.55 $mu extrm{m}$ 파장 영역의 빛이 사용되고 있다. 향후, 각 가정마다 광선로를 연결하는 Fiber-to-the-home (FTTH)의 개념과 광CATV가 발전함에 따라 1.3 및 1.55 $\mu\textrm{m}$ 빛을 검출하는 소자와 송신하는 소자가 필요하게 된다. 본 논문에서는 이러한 다중파장을 검출할 수 있는 집적소자를 제작 및 측정하였다. 본 논문에서 사용된 epitaxial layer의 구조는 N-InP 기판 위에 1 $\mu\textrm{m}$의 n-InP buffer층, 5층의InGaAs/InGaAsP 다중양자우물과 0.2 $\mu\textrm{m}$ InGaAsP separate confinement heterostructure (SCH) 층, 0.5$\mu\textrm{m}$ InP clad층과 0.1 $\mu\textrm{m}$ InGaAs cap 층으로 구성되어있다. 모든 epi 층은 InP 기판에 격자 정합이 되어있다. 다중양자우물구조는 84 $\AA$의 InGaAs 우물층과 100 $\AA$의 InGaAsP 장벽층으로 구성되며, 상온에서 0.787 eV (1.575 $\mu\textrm{m}$)의 bandgap energy를 갖도록 설계하였다. (중략)

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.38-48
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• 1992

OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.