Studies on MMIC oscillator using HBT for X-band

X-band용 MMIC 오실레이터 설계연구

In this paper, HBT's with lower phase noise and passive elements, such as resistors, capacitors and inductors, for resonance and impedance matching networks are designed, fabricated, tested, and carefully analysed, respectively, and then, they are integrated for the design and fabrication of functional X-band oscillators with lower phase noise. Epi-wafers for HBT's with the structure of graded $Al_{x}$G $a_{1-x}$ As emitter and C-doped base layer of 700.angs. thick were used to specially emphasize the improvement of $f_{T}$ and $f_{max}$, and the lowering of phase noise, in design aspects. At the test frequencies of 12GHz, capacitances of MIM capacitors, spiral inductor, and resistances are 0.5~10pF, 0.4~11.06nH, and 20~1,380.ohm., respectively. The emitter size of HBY's for the X-band MMIC oscillators is 3*10u $m^{2}$, and find chip size is 0.9*0.9m $m^{2}$..EX>.