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http://dx.doi.org/10.4313/JKEM.2007.20.10.883

The Fabrication of ZnO UV Photodetector with p-type Inversion Layer and Analysis of Vrlph Properties  

Oh, Sang-Hyun (원광대학교 전기전자및정보공학부)
Kim, Deok-Kyu (청주대학교 전자정보공학부)
Park, Choon-Bae (원광대학교 전기전자및정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.10, 2007 , pp. 883-888 More about this Journal
Abstract
Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.
Keywords
UV detector; p-type inversion layer; ZnO thin films; RF sputtering system;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 M. A. Khan, Q. Chen, J. Sun, M. Shur, and B. Gelmont, 'Two-dimensional electron gas in GaN/AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition', Appl. Phys. Lett., Vol. 67, p. 1429, 1995   DOI   ScienceOn
2 S. N. Mohammad, A. A. Salvador, and H. Morkoc, 'Emerging gallium nitride based devices', Proceeding of the IEEE, Vol. 83, No. 10, p. 1306, 1995   DOI   ScienceOn
3 C. H. Park, J. Y. Lee, S. Im, and T. G. Kim, 'n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique', Nuclear Instruments and Methods in Physics Research B, Vol. 206, p. 432, 2003   DOI   ScienceOn
4 F. Masuoka, K. Ooba, H. Sasaki, H. Endo, S. Chiba, K. Maeda, H. Yoneyama, I. Niikura, and Y. Kashiwaba, 'Applicability of ZnO single crystals for ultraviolet sensors', Phus. Sat. Sol. (c), Vol. 3, No. 4, p. 1238, 2006   DOI   ScienceOn
5 Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, Y. S. Park, and C. J. Youn, 'ZnO devices: Photodiodes and p-type field-effect transistors', Appl. Phys. Lett., Vol. 87, p. 153504. 2005   DOI   ScienceOn
6 이주영, 김홍승, 이정윤, 장지호, 안형수, 양민, 이삼녕, 'Si 기판 위에 증착된 ZnO막의 열처리 효과에 대한 구조적, 광학적 특성', 한국물리학회, 48권, 5호, p. 458, 2004
7 C. H. Park, I. S. Jeong, H. S. Bae, T. G. Kim, and S. Im, 'n-ZnO/p-Si photodiodes fully isolated by $B^{+}ion$-implantation', Nucleare Instruments and Methods in Physics Research B, Vol. 216, p. 127, 2004   DOI   ScienceOn
8 T.-H. Moon, M.-C. Jeong, W. Lee, and J.-M. Myoung, 'Schottky metal library for ZnO-Based UV photodiode fabricated by the combinatorial ion beam-assisted deposition', Applied Surface Science, Vol. 240, p. 280, 2005   DOI   ScienceOn
9 J. Y. Lee, Y. S. Choi, W. H. Choi, H. W. Yeom, Y. K. Yoon, J. H. Kim, and S. Im, 'Characterization of films and intyerfaces in n-ZnO/p-Si photodiodes', Thin Solid Films, Vol. 420-421, p. 112, 2002
10 유인성, 소순진, 박춘배, '기판의 결정구조에 따른 RF 스퍼터링 ZnO 박막의 성장과 미세구조 분석', 전기전자재료학회논문지, 19권, 5호, p. 461, 2006   과학기술학회마을   DOI
11 H.-S. Kwack, Y.-H. Cho, G. H. Kim, M. R. Park, D. H. Youn, S. B. Bae, K. S. Lee, J.-H. Lee, J.-H. Lee, T. W. Kim, T. W. Kang, and K. L. Wang, 'Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/GaN single heterostructures', Appl. Phys. Lett., Vol. 87, p. 041909. 2005   DOI   ScienceOn
12 왕민성, 유인성, 박춘배, 'In-situ 분위기 Annealing에 따른 ZnO/Sapphire(0001) 박막의 구조적 특성 분석', 전기전자재료학회논문지, 19권, 8호, p. 769, 2006   과학기술학회마을   DOI
13 Y. W. Heo, B. S. Kang, L. C. Tien, D. P. Norton, F. Ren, J. R. La Toche, and S. J. Pearton, 'UV photoresponse of single ZnO nanowires', Appl. Phys. A, Vol. 80, p. 497, 2005   DOI