Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 10
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- Pages.79-86
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- 1994
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- 1016-135X(pISSN)
Fabrication of High Power InGaAs Diode Lasers
고출력 InGaAs레이저 다이오드 제작
Abstract
Gain-guided broad-area single quantum well separate confinement heterostructure diode lasers have been fabricated from structures grown by metal organic vapor phase epitaxy. The active layer of the epi-structure is InGaAs emitting 962-965nm and the guiding layer GaAs. The channel width is fixed to 150
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