A Monolithic Integration with A High Density Circular-Shape SOI Microsensor and CMOS Microcontroller IC

CMOS Microcontroller IC와 고밀도 원형모양SOI 마이크로센서의 단일집적

  • 이명옥 (동신대학교 정보통신공학과) ;
  • 문양호 (삼성전기주식회사)
  • Published : 1997.12.01

Abstract

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

Keywords

References

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