Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Breakdown Voltage and On-resistance Characteristics of the Surface Doped SOI RESURF LDMOSFET

표면 도핑 기법을 사용한 SOI RESURF LDMOSFET의 항복전압 및 온-저항 특성 분석

  • 김형우 (한국전기연구원 전력반도체연구그룹) ;
  • 김상철 (한국전기연구원 전력반도체연구그룹) ;
  • 방욱 (한국전기연구원 전력반도체연구그룹) ;
  • 강인호 (한국전기연구원 전력반도체연구그룹) ;
  • 김기현 (한국전기연구원 전력반도체연구그룹) ;
  • 김남균 (한국전기연구원 전력반도체연구그룹)
  • Published : 2006.01.01
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Abstract

In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.

Keywords

References

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