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http://dx.doi.org/10.4313/JKEM.2006.19.1.023

Breakdown Voltage and On-resistance Characteristics of the Surface Doped SOI RESURF LDMOSFET  

Kim Hyoung-Woo (한국전기연구원 전력반도체연구그룹)
Kim Sang-Cheol (한국전기연구원 전력반도체연구그룹)
Bahng Wook (한국전기연구원 전력반도체연구그룹)
Kang In-Ho (한국전기연구원 전력반도체연구그룹)
Kim Kl-Hyun (한국전기연구원 전력반도체연구그룹)
Kim Nam-Kyun (한국전기연구원 전력반도체연구그룹)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.1, 2006 , pp. 23-28 More about this Journal
Abstract
In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.
Keywords
LDMOSFET; Breakdown voltage; On-resistance; Surface-doped;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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