• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.30-37
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.4
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• pp.134-139
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• 2008

A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

• The Magazine of the IEIE
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• v.11 no.5
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• pp.69-74
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• 1984

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.42-47
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• 1998

We have fabricated electron-optical lens for micro E-beam system that can overcome the limitation of current E-beam lithography. Our electron-optical lens consists of multiple silicon electrodes which were fabricated by micromachining technology and assembled by anodic bonding. The assembled system was installed in UHV chamber to observe the emission characteristics of focused electrons by the electro-optical lens. We used STM(Scanning Tunneling Microscope) tip for electron source. By performing lithography with the focused electrons with PMMA(poly-methylmethacrylate) as E-beam resist. We could draw 0.13${\mu}{\textrm}{m}$ nano-scale lines.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.434-437
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• 2003

Evaluation or the patterning accuracy of e-beam lithography machines requires a high precision inspection system that is capable of measuring the true xy-locations of fiducial marks generated by the e-beam machine under test. Fiducial marks are fabricated on a single photo mask over the entire working area in the form of equally spaced two-dimensional grids. In performing the evaluation, the principles of self-calibration enable to determine the deviations of fiducial marks from their nominal xy-locations precisely, not being affected by the motion errors of the inspection system itself. It is. however, the fact that only repeatable motion errors can be eliminated, while random motion errors encountered in probing the locations of fiducial marks are not removed. Even worse, a random error occurring from the measurement of a single mark propagates and affects in determining locations of other marks, which phenomenon in fact limits the ultimate calibration accuracy of e-beam machines. In this paper, we describe an uncertainty analysis that has been made to investigate how random errors affect the final result of self-calibration of e-beam machines when one uses an optical inspection system equipped with high-resolution microscope objectives and a precision xy-stages. The guide of uncertainty analysis recommended by the International Organization for Standardization is faithfully followed along with necessary sensitivity analysis. The uncertainty analysis reveals that among the dominant components of the patterning accuracy of e-beam lithography, the rotationally symmetrical component is most significantly affected by random errors, whose propagation becomes more severe in a cascading manner as the number of fiducial marks increases

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.43-48
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• 2009

The aim of this paper is to describe the development of the electron-beam optic analysis algorithm for simulating the e-beam behavior concerned with electrostatic lenses and their focal properties in the micro-column of the multi-beam lithography system. The electrostatic lens consists of an array of electrodes held at different potentials. The electrostatic lens, the so-called einzel lens, which is composed of three electrodes, is used to focus the electron beam by adjusting the voltages of the electrodes. The optics of an electron beam penetrating a region of an electric field is similar to the situation in light optics. The electron is accelerated or decelerated, and the trajectory depends on the angle of incidence with respect to the equi-potential surfaces of the field. The performance parameters, such as the working distances and the beam diameters are obtained by the computational simulations as a function of the focusing voltages of the einzel lens electrodes. Based on the developed simulation algorithm, the high performance of the micro-column can be achieved through optimized control of the einzel lens.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.1-10
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• 2009

This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.3
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• pp.15-22
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• 2008