Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study on Pattern Fabrication using Proximity Effect Correction in E-Beam Lithography

전자빔 리소그래피에서의 근접효과 보정을 이용한 패턴 제작에 관한 연구

  • Oh, Se-Kyu (Dept. of Nano-IT Engineering, Seoul National University of Technology) ;
  • Kim, Dong-Hwan (School of Mechanical Design and Automation Engineering, Seoul National University of Technology) ;
  • Kim, Seung-Jae (Dept. of Mechatronics, Industrial Graduate school, Seoul National University of Technology)
  • 오세규 (서울산업대학교 에너지환경대학원 나노아이티공학과) ;
  • 김동환 (서울산업대학교 기계설계자동화공학부) ;
  • 김승재 (서울산업대학교 산업대학원 메카트로니스공학과)
  • Published : 2009.06.30
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Abstract

This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

Keywords

References

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