Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of a Graphene Nanoribbon with Electron Beam Lithography Using a XR-1541/PMMA Lift-Off Process

  • Jeon, Sang-Chul (Department of Nano Patterning Process, National NanoFab Center) ;
  • Kim, Young-Su (Department of Nano Patterning Process, National NanoFab Center) ;
  • Lee, Dong-Kyu (Department of Industrial Engineering Chemistry, Chungbuk National University)
  • Received : 2010.06.01
  • Accepted : 2010.07.09
  • Published : 2010.08.25
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Abstract

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

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References

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