• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 춘계 학술발표회 초청강연 및 논문집
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• pp.281-292
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• 2008

Prefabricated Board Drains (PBDs) recently become more widely used than conventional sand drains in improving soft ground because the PBD is more time and cost effective. The performance of PBDs is affected by disturbance in the adjacent soil formation during inserting mandrels, the intrusion of fine particles into filter fabric, and necking of the drain by excessive lateral pressure especially occurring in very deep clay formation such as the Busan New Port site. In this study, the PBD with double-core is introduced, which seems to overcome the shortcomings of usual single-core PBDs. An in-situ test program was established in the Busan New Port site, in which a set of the double-core PBDs and the single-core PBDs was installed to compare the efficiency of each of the drains. The discharge capacity of the double-core and the single-core PBDs was compared for various confining pressures in the modified Delft test and the chamber test. A series of CRS consolidation tests was performed in order to obtain profiles of void ratio-effective stress and void ratio-permeability relationships in the Busan New Port site that are used as input date in performing a numerical program ILLICON. The numerically simulated settlements of ground surface in the test site are in good agreement with those of in-situ measurements. In addition, the performance of the double-core and single-core PBDs has been experimentally and numerically compared in this paper.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2010년도 춘계 학술발표회
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• pp.495-508
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• 2010

Vertical drains are commonly used to accelerate the consolidation process of soft soils, such as dredged materials. The installation of vertical drain provides a radial drainage path to water in the deposit soil in addition to the vertical direction. An estimation of time rate of settlement is considerably complicated when vertical drains are installed to enhance consolidation process of dredged material because the vertical drains are commonly installed before self-weight consolidation is ceased. In this paper, the vertical drain theory developed by Barron(1948) is applied to analyze the non-linear consolidation behavior considering radial drainage. The overall average degree of self-weight consolidation of the dredged soil under the condition that the water is drained in both radial and vertical directions is estimated using the Carillo(1942) formula. In addition, the Morris(2002) theory and the one-dimensional non-linear finite strain numerical model, PSDDF, are applied to analyze the self-weight consolidation in case of only the vertical drainage is considered. The new analysis approach proposed herein can simulate properly the time rate of the self-weight consolidation of dredged materials that is facilitated with vertical drains.

• 대한전자공학회논문지SD
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• 제49권1호
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• pp.8-14
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• 2012

전체 채널 폭은 같지만 핀 수와 핀 폭이 다른 n-채널 MuGFET의 특성을 측정 비교 분석하였다. 사용된 소자는 Pi-gate 구조의 MuGFET이며 핀 수가 16이며 핀 폭이 55nm인 소자와 핀 수가 14이며 핀 폭이 80nm인 2 종류의 소자이다. 측정 소자성능은 문턱전압, 이동도, 문턱전압 roll-off, DIBL, inverse subthreshold slope, PBTI, hot carrier 소자열화 및 드레인 항복전압 이다. 측정 결과 핀 폭이 작으며 핀 수가 많은 소자의 단채널 현상이 우수한 것을 알 수 있었다. PBTI에 의한 소자열화는 핀 수가 많은 소자가 심하며 hot carrier에 의한 소자열화는 비슷한 것을 알 수 있었다. 그리고 드레인 항복 전압은 핀 폭이 작고 핀 수가 많은 소자가 높은 것을 알 수 있었다. 단채널 현상과 소자열화 및 드레인 항복전압 특성을 고려하면 MuGFET소자 설계 시 핀 폭을 작게 핀 수를 많게 하는 것이 바람직하다.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• 대한토목학회논문집
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• 제26권6A호
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• pp.965-976
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• 2006

지진하중에 대한 구조물의 생애주기비용 최적설계나 성능개선을 위해서는 생애주기 지진신뢰성해석에 기초한 접근이 불가피하다. 최근 몇몇 연구자들이 생애주기비용에 기초한 구조물의 내진설계 및 성능개선을 위한 방법론은 제안하여 왔지만, 대부분의 연구가 생애주기비용 산정을 위한 방법론 개발에 중점을 둔 연구이다. 따라서 대부분의 기존연구에서는 열화하는 구조물의 생애주기 지진신뢰성해석에 있어서 내진보강, 유지관리, 그리고 환경적 열화와 같은 주요한 인자들을 고려하지 못한 것이 사실이다. 이에 본 연구에서는 교량의 체계적인 생애주기 지진신뢰성해석 방법론을 제안하였고, 교량의 지진신뢰성해석을 위한 프로그램인 HPYER-DRAIN2DX-DS를 개발하였다. 개발된 프로그램은 내진보강이나 유지전략의 적용유무에 따른 예제교량의 생애주기 지진신뢰성해석 문제에 적용되었으며, 이를 통해 프로그램의 적용성을 검토해 보았다. 적용 예를 통해 본 연구에서 개발된 HPYER-DRAIN2DX-DS는 지진에 대한 교량의 생애주기비용 최적설계, 내진보강 및 유지관리에 있어 서 매우 유용한 도구로 사용될 수 있을 것으로 판단된다.

• 한국지반공학회지:지반
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• 제11권3호
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• pp.113-122
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• 1995

본 논문은 소성지수 약30의 해성점토에 모래 및 모래로 제작한 실트분을 혼합하여 제작한 중간토의 역학적 성질을 파악하는데 그 목적을 두고 있다. 실험으로는 물리적 실험을 거친 후, 공학적 특성을 살피기 위해 압밀시험과 삼축압축전단시험을 하였다. 압밀시험에서는 오성지수의 변화에 따라 중간토의 압밀특성, 즉 압밀곡선의 형태와 투수성 및 압축성이 변화하는 것으로부터 중간토와 점토의 영역을 구분하였다. 한편, 삼축압축전단시험에서는 배수조건에 따른 각각의 시료의 압축전단특설을 밝히고, 특히 비배수조건하에서는 변형률 속도가 전단특성에 끼치는 영향을, 그리고 변형률속도와 소성지수 및 시료의 과압밀비의 변화에 따른 변형률경화 현상의 특성과 그 원인을 전단 중에 측정한 간극수압의 거동으로부터 규명하였다. 아울러 중간토의 전단특성에 미치는 배수조건과 변형률속도의 영향을 비교검토하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.169-181
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• 2011

In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: $g_{m1}$, $g_{m2}$, $g_{m3}$, and figure-of-merit (FOM) metrics; $V_{IP2}$, $V_{IP3}$, IIP3 and 1-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth ($X_j$) or negative junction depth (NJD) have been examined for GME-TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.

• 대한토목학회논문집
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• 제14권4호
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• pp.977-988
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• 1994

본 연구는 연약지반상에 sand drain을 타설하고 성토하여 교대 및 교각을 시공하는 진월 인터체인지에서 기초지반의 침하, 융기 및 이미 시공된 교각기초부분의 수평방향 변위를 측정한 실측치와 Sekiguchi의 탄 점소성모델을 Biot의 압밀방정식과 결합하여 2차원 평면변형용조건으로 유한요소해석한 결과를 비교 검토하였다. 이때 교각기초인 강판말뚝은 등가의 강널말뚝벽으로 환산하였다. 그리고 환산한 벽체에 축력의 변화, 강성의 변화, 지지조건의 변화 및 고정점위치의 변화 동에 따른 기초지반의 거동과 강널말뚝벽체의 거동 특성을 밝혔다.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.278-282
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• 2018

We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient ${\eta}$, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of ${\eta}$ remains nearly constant.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2010년도 추계 학술발표회
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• pp.467-472
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• 2010

Individual vacuum pressure method is soft ground improvement technique, in which a vacuum pressure can be directly applied to the vertical drain board to promote consolidation and strengthening the soft ground. This method does not require a surcharge load, different to embankment or pre-loading method. In this study, given the inner displacement of the ground where the individual vacuum pressure is applied, this dissertation aimed to reproduce the state of stress in the ground that is subject to the constraints created by the depth of improvement area. Modified Cam Clay theory which made it possible to take into account the isotropic displacement of the ground was applied to the NAP-IVP used simulation; the conception of equivalent permeability proposed by Hird was also applied so that the 3-dimensional real construction effect of drain materials could be reflected in the analysis.